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The Effects of Substrate Bias and Si Doping on the Properties of Rf Sputtered Bn Films

Published online by Cambridge University Press:  25 February 2011

P.K. Banerjee ,
J.S. Kim ,
B. Chatterjee ,
M. Platek  and
S.S. Mitra
P.K. Banerjee
Affiliation:
Thin Film Research Laboratory, Department of Electrical Engineering University of Rhode Island, Kingston, RI 02881, USA
J.S. Kim
Affiliation:
Thin Film Research Laboratory, Department of Electrical Engineering University of Rhode Island, Kingston, RI 02881, USA
B. Chatterjee
Affiliation:
Thin Film Research Laboratory, Department of Electrical Engineering University of Rhode Island, Kingston, RI 02881, USA
M. Platek
Affiliation:
Thin Film Research Laboratory, Department of Electrical Engineering University of Rhode Island, Kingston, RI 02881, USA
S.S. Mitra
Affiliation:
Thin Film Research Laboratory, Department of Electrical Engineering University of Rhode Island, Kingston, RI 02881, USA
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Abstract

The effect of substrate bias on the properties of rf sputtered boron nitride films on Si and GaAs substrate were investigated. IR transmission and reflectivity of films with different substrate bias were measured with Perkin Elmer 983 IR spectroscopy. From the IR reflectivity data, transverse optical mode(TO) and longitudinal optical mode(LO) frequencies were derived by fitting Kramer-Kronig model. Absorption coefficient was determined from IR transmission data. The resultant TO and LO modes showed that substrate bias caused broadening of reststrahlen band of rf sputtered boron nitride. We also tried to dope boron nitride films with silicon by alternate sputtering of BN and Si targets controlling sputtering time of each target followed by annealing. Electrical resistivity was measured over the temperature range between 175 K to 370 K for both intrinsic and Si-doped boron nitride films. Intrinsic rf sputtered boron nitride showed Little change in resistivity (109 Ω cm - 1011 Ω cm ) over the temperature range studied. While Si doped BN showed linear change in resistivity with increasing temperature and its activation energy was about 0.22 eV. The effect of substrate bias was also investigated by monitoring the XPS core level spectra of both Bis and N Is peaks, respectively. Substrate bias caused the shift of both B ls and N ls peak to higher binding energy. The effect of substrate bias on refractive index was also studied.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 242: Symposium G – Wide Band-Gap Semiconductors , 1992 , 617
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

1. Wiggins, M. D., Aita, C. R. and Hickernell, F. S., J. Vac. Sci. Technol. A, 2(2), 322(1983)Google Scholar
2. Seidel, K., Reichelt, K., Schal, W. and Dimigen, H., Thin Solid Films, 151, 243(1987)Google Scholar
3. Kouvetakis, J., Patel, V. V., Miller, C. W. and Beach, D. B., J. Vac. Sci. Technol. A., 8(6), 3929(1990).Google Scholar
4. Ikeda, T., Kawate, Y. and Hirai, Y., J. Vac. Sci. Technol. A., 8(4), 3168(1990).Google Scholar
5. Gielisse, P. J., Mitra, S. S., Plendl, J. N., Griffis, R. D. and Mansur, L. C., Phys. Rev., 155, 1039(1967).CrossRefGoogle Scholar
6. Arya, S. P. S. and D'amico, A., Thin Solid Films, 157, 267(1988).Google Scholar
7. Mishima, O., MRS Proceedings, Vol. 162, 543(1990).CrossRefGoogle Scholar
8. Gissler, W., Haupt, J., Hoffman, A., Gibson, P. N. and Rickerby, G., Thin Soild Films, 199. 113 (1991).Google Scholar