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Effects of Nitrogen Addition on the Properties of a-SiCN:H Films Using Hexamethyldisilazane

Published online by Cambridge University Press:  01 February 2011

Amornrat Limmanee
Affiliation:
limmanee.a.aa@m.titech.ac.jp, Tokyo Institute of Technology, Physical electronics, 2-12-1-S9-9 O-okayama, Meguro-ku, Tokyo, 152-8552, Japan
Michio Otsubo
Affiliation:
otsubo@solid.pe.titech.ac.jp, Tokyo Institute of Technology, Department of Physical Electronics, 2-12-1-S9-9 O-okayama, Meguro-ku, Tokyo, 152-8552, Japan
Tsutomu Sugiura
Affiliation:
sugiura@solid.petitech.ac.jp, Tokyo Institute of Technology, Department of Physical Electronics, 2-12-1-S9-9 O-okayama, Meguro-ku, Tokyo, 152-8552, Japan
Takehiko Sato
Affiliation:
Sato.Takehiko@dn.MitsubishiElectric.co.jp, Mitsubishi Electric Corporation, Material&Processing Technology, 1-1-57, Miyashimo,Sagamihara, Kanagawa, 229-1195, Japan
Shinsuke Miyajima
Affiliation:
miyajima.s.aa@m.titech.ac.jp, Tokyo Institute of Technology, Department of Physical Electronics, 2-12-1-S9-9 O-okayama, Meguro-ku, Tokyo, 152-8552, Japan
Akira Yamada
Affiliation:
yamada.a.ac@m.titech.ac.jp, Tokyo Institute of Technology, Quantum Nanoelectronics Research Center, 2-12-1-S9-9 O-okayama, Meguro-ku, Tokyo, 152-8552, Japan
Makoto Konagai
Affiliation:
konagai.m.aa@m.titech.ac.jp, Tokyo Institute of Technology, Department of Physical Electronics, 2-12-1-S9-9 O-okayama, Meguro-ku, Tokyo, 152-8552, Japan
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Abstract

We deposited a-SiCN:H films by HWCVD using a gas mixture of hexamethyldisilazane, H2 and N2, and fabricated cast polycrystalline silicon solar cells with the a-SiCN:H passivation and anti-reflection layer. N2 addition led to the reduction of the refractive index of the a-SiCN:H films due to the increase in nitrogen concentration of the films. This improved performance of the antireflection layer. The advantage of adding N2 to the process was demonstrated by the improvement in short circuit current (JSC) and efficiency of cast polycrystalline silicon solar cells. At present, the efficiency of cast polycrystalline silicon solar cell using a-SiCN:H film as a passivation layer reached 14.2%.

Type
Research Article
Copyright
Copyright © Materials Research Society 2007

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References

1 Limmanee, A., Otsubo, M., Sato, T., Miyajima, S., Yamada, A., Konagai, M., Proceeding of 4th World Conference on Photovoltaic Energy Conversion, Hawai, U.S.A, May 7-12, 2006, p.1227.Google Scholar
2 Limmanee, A., Otsubo, M., Sato, T., Miyajima, S., Yamada, A., Konagai, M., Jpn. J. Appl. Phys 46, 56 (2007).CrossRefGoogle Scholar
3 Limmanee, A., Otsubo, M., Sugiura, T., Sato, T., Miyajima, S., Yamada, A., Konagai, M., Proceeding of 4th International Conference on Hot-Wire CVD process, Gifu, Japan, October 4-8, 2006, p.231.Google Scholar

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Effects of Nitrogen Addition on the Properties of a-SiCN:H Films Using Hexamethyldisilazane
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Effects of Nitrogen Addition on the Properties of a-SiCN:H Films Using Hexamethyldisilazane
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