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Effects of Light on the Resonant Tunneling in Silicon Quantum Dot Diode
Published online by Cambridge University Press: 26 February 2011
Abstract
The resonant tunneling via nanoscale silicon particles embedded in an a-SiO2 matrix in a diode structure has revealed a range of intriguing observations such as extremely sharp peaks and steps and periodic oscillations in (conductance-voltage) G-V measurements. Recently we have discovered a drastic sharpening of the conductance peak with light. Phase measurements show that the effects of light may be understood by invoking the filling of charged traps.
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- Copyright © Materials Research Society 1995
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