Hostname: page-component-5c6d5d7d68-wp2c8 Total loading time: 0 Render date: 2024-08-16T03:51:31.787Z Has data issue: false hasContentIssue false
  • English
  • Français

Effects of La0.5Sr0.5CoO3 sol concentration on the microstructure and dielectric properties of Ba0.6Sr0.4TiO3 films prepared by sol-gel method on Ti substrate

Published online by Cambridge University Press:  18 December 2012

Dan Jiang ,
Songwei Han ,
Xuelian Zhao  and
Jinrong Cheng
Dan Jiang
Affiliation:
School of Materials Science and Engineering, Shanghai University, Shanghai 200072
Songwei Han
Affiliation:
School of Materials Science and Engineering, Shanghai University, Shanghai 200072
Xuelian Zhao
Affiliation:
School of Materials Science and Engineering, Shanghai University, Shanghai 200072
Jinrong Cheng*
Affiliation:
School of Materials Science and Engineering, Shanghai University, Shanghai 200072
*
*corresponding author: jrcheng@shu.edu.cn
Get access

Abstract

Ba0.6Sr0.4TiO3 (BST) thin films were deposited on La0.5Sr0.5CoO3 (LSCO) buffered Ti substrates. Both BST and LSCO were prepared by sol-gel method. X-ray diffraction (XRD) and scanning electron microscopy (SEM) analysis were used to investigate the effect of LSCO sol concentration on the crystallinity and surface morphology of the films. The results show that with the increase of LSCO sol concentration, BST films show variation of the structure and dielectric properties. BST films for LSCO of 0.2 mol/L exhibit a better crystallinity and improved dielectric properties, with the tunability, dielectric constant and tanδ of 30%, 420 and 0.028 respectively.

Keywords

filmdielectricsol-gel
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1494: Symposium F – Oxide Semiconductors and Thin Films , 2013 , pp. 253 - 258
Copyright
Copyright © Materials Research Society 2012 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Tagantsev, A. K., Sherman, V. O., Astafiev, K. F., Venkatesh, J., and Setter, N., “Ferroelectric materials for microwave tunable applications,” Electroceramics. 11,5–66 (2003).CrossRefGoogle Scholar
Vendik, O. G., Hollmann, E. K., Kozyrev, A. B., and Prudan, A. M., “Ferroelectirc tuning of planar bulk microwave devices,” Superconductivity. 12, 325 (1999).CrossRefGoogle Scholar
Zhong, S., Alpay, S. P., Cole, M. W., Ngo, E., Hirsch, S., and Demaree, J. D., “Highly tunable and temperature insensitive multilayer barium strontium titanate films,” Appl. Phys.Lett. 90, 092901 (2007).CrossRefGoogle Scholar
Kikkawa, T., Fujiwara, N., Yamada, H., Miyazaki, S., Nishiyama, F., and Hirose, M., “Energy band structure of Ru/(Ba, Sr)TiO/Si capacitor deposited by inductively coupled plasma-assisted radio-frequency-magnetron plasma sputtering, ”Appl. Phys. Lett. 81, 2821–2823(2002).CrossRefGoogle Scholar
Srivastava, A., Craciun, V., Howard, J. M., and Singh, R. K., “ Enhanced electrical properties of Ba0.5 Sr0.5TiO3 thin films grown by ultraviolet-assisted pulsed-laser deposition,”Appl. Phys.Lett. 75, 3002–3004(1999).CrossRefGoogle Scholar
Saha, S., Kaufman, D. Y., Streiffer, S. K., and Auciello, O., “Anomalous leakage current characteristics of Pt/(Ba0.75 Sr0.25) Ti1+ yO3+ z/Pt thin films grown by metalorganic chemical vapor deposition,”Appl. Phys.Lett. 83, 1414–1416 (2003).CrossRefGoogle Scholar
Fornasiero, P., Monte, R. D., Rao, G. R., Kaspar, J., Meriani, S., Trovarelli, A., and Graziani, M., “Rh-loaded CeO2-ZrO2 solid-solutions as highly efficient oxygen exchangers: dependence of the reduction behavior and the oxygen storage capacity on the structural,”Journal of Catalysis. 151, 168–177 (1995).CrossRefGoogle Scholar
Dutta, M., Mridha, S., Basak, D., “Effect of sol concentration on the properties of ZnO thin films prepared by sol-gel technique,” Applied Surface Science.254, 2743–2747(2008).CrossRefGoogle Scholar
Han, H., Song, X., Zhong, J. et al. , Highly a-axis-oriented Nb-doped PZT thin films grown by sol–gel technique for uncooled infrared dectors,” Appl. Phys. Lett. 85, 5310(2004).CrossRefGoogle Scholar
Ghonge, S.G., Goo, E., Ramesh, R., Haakenaasen, R., Fork, D.K., “Microstructure of epitaxial oxide thin film heterostructures on silicon by pulsed laser deposition” Appl. Phys. Lett. 64, 3407 (1994).CrossRefGoogle Scholar
Jong-Jin, Choi, Jungho, Ryu, Byung-Dong, Hahn, Woon-Ha, Yoon, and Dong-Soo, Park, “Effects of a Conducting LaNiO3 Thick Film as a Buffer Layer of a Pb(Zr, Ti)O3 Film on Titanium Substrates,” Appl. Ceram. Technol.6 (6) 687–691 (2009).Google Scholar
Chan, P.W., Wu, W., Wong, K.H., Tong, K.Y., Cheung, J.T., “Preparation and characterization of epitaxial films and of an a-axis oriented heterostructure on (001) by pulsed laser deposition,” Physics D: Applied Physics. 30, 957 (1997).CrossRefGoogle Scholar
Gong, Jia et al. ., “Improvement in dielectric and tuanble properties of Fe-doped Ba0.6Sr0.4TiO3 thin films grown by pulsed laser deposition,” unpublished. Google Scholar
Nayak, M. and Tseng, T.-Y, “Dielectric tunability of barium strontium titanate films prepared by a sol-gel method,”Thin Solid Films. 408, 194–199(2002).CrossRefGoogle Scholar
Chen, Feng, Cheng, Jinrong, Yu, Shenwen, Meng, Zhongyan, “Structural and electrical properties of Pb(Zr0.53Ti0.47)O3 films prepared on La0.5Sr0.5CoO3 coated Si substrates,”Eur. Ceram. Soc. (2009).Google Scholar