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Effects of a Ta Interlayer on the Titanium Silicide Reaction: C40 Formation and Higher Scalability of the TiSi2 Process.
Published online by Cambridge University Press: 21 March 2011
When a Ta layer is deposited at the Si/Ti interface a new phase has been detected, i.e. theTiSi2C40. The C40-C54 transformation kinetics and the film morphology are consistent with an increase of the nucleation density with respect to the C49-C54 transition. The activation energies for the nucleation rate (4.2±0.3 eV) and the growth velocity (4.0±0.4 eV) have been obtained from the in situ sheet resistance and the Transmission Electron Microscopy results. These results show that the process with a Ta layer at the Ti/Si interface has a greater scalability with respect to the standard TiSi2 process.
- Research Article
- MRS Online Proceedings Library (OPL) , Volume 670: Symposium K – Gate Stack and Sillicide Issues in Silicon , 2001 , K6.3
- Copyright © Materials Research Society 2001