Skip to main content Accessibility help
×
Home
Hostname: page-component-59b7f5684b-vcb8f Total loading time: 0.265 Render date: 2022-09-25T20:27:02.868Z Has data issue: true Feature Flags: { "shouldUseShareProductTool": true, "shouldUseHypothesis": true, "isUnsiloEnabled": true, "useRatesEcommerce": false, "displayNetworkTab": true, "displayNetworkMapGraph": false, "useSa": true } hasContentIssue true

Effect of TMG Addition on the Epitaxial Growth of 3C-SiC on Si(100) and Si(111) Using Hexamethyldisilane

Published online by Cambridge University Press:  21 March 2011

Ki Hoon Lee
Affiliation:
Department of Materials Science and Engineering, Case Western Reserve University, Cleveland, OH 44106, U.S.A
Kasif Teker
Affiliation:
Department of Materials Science and Engineering, Case Western Reserve University, Cleveland, OH 44106, U.S.A
Ming Zhang
Affiliation:
Department of Materials Science and Engineering, Case Western Reserve University, Cleveland, OH 44106, U.S.A
Juyong Chung
Affiliation:
Department of Materials Science and Engineering, Case Western Reserve University, Cleveland, OH 44106, U.S.A
Pirouz Pirouz
Affiliation:
Department of Materials Science and Engineering, Case Western Reserve University, Cleveland, OH 44106, U.S.A
Get access

Abstract

Epitaxial and crack-free 3C-SiC film was successfully grown on Si(100)/(111) by a one step process without separate nucleation or carbonization steps at a low temperature of 1200°C by MOVPE. The growth was achieved by using hexamethyldisilane (HMDS) with the addition of a small amount of trimethylgallium (TMG) (0.5 sccm) with dilute hydrogen (12% H2 + Ar) as a carrier gas. Without the addition of TMG during growth, epitaxial growth of SiC on Si was only possible at temperatures above 1300°C following a nucleation step at 1200∼1250°C. After growth, all the films were analyzed by using cross-sectional transmission electron microscopy (TEM), X-ray diffraction (XRD), atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS) and Nomarski differential interference microscopy (NDIM). It was observed by XPS that the SiC film contained only a small amount of Ga, which means the Ga component of TMG does not much accumulate in SiC, in spite of a relatively high ratio of TMG/HMDS. To investigate the effect of TMG flow rate, various amounts of TMG (0.5 - 5sccm) were added during SiC deposition. Below 0.5 sccm of TMG flow rate, the SiC film showed epitaxial growth, observed by TEM and XRD. However, with an increasing flow rate of TMG above 1 sccm, the XRD peak of 3C-SiC becomes smaller and slightly shifted. At 5 sccm, the film was polycrystalline possibly implying that the SiC lattice is being strained gradually with TMG addition. It is also observed by AFM that, at the initial stages of growth, nucleation is much facilitated with the addition of TMG. The deposition rate with the addition of TMG at 1200°C is about 650 nm/hr, which is much faster than the rate without TMG addition (480 nm/hr). Thus, it is believed that TMG addition has a positive effect on the nucleation and HMDS decomposition during deposition. Also, with the addition of a small amount of Ar+10%HCl during growth, one-step deposition was possible helped by stress release due to void formation at the SiC/Si interface.

Type
Research Article
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Chandhry, M. I. and Wright, R. L., J. Mat. Res., 5, 1595 (1977).CrossRefGoogle Scholar
2. Schichting, J., Power Metal., 12, 12 (1992).Google Scholar
3. Nishino, S., Powell, J. A., and Will, H. A., Appl. Phys. Lett., 42, 460 (1983).CrossRefGoogle Scholar
4. Addamiano, A. and Sprague, J. A., Appl. Phys. Lett., 44, 525 (1984).CrossRefGoogle Scholar
5. Li, J. P. and Steckl, A. J., J. Electrochem. Soc., 142, 634 (1995).CrossRefGoogle Scholar
6. Teker, K., Jacob, C., Chung, J. and Hong, M. H., Thin Solid Films, 371, 53 (2000).CrossRefGoogle Scholar

Save article to Kindle

To save this article to your Kindle, first ensure coreplatform@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about saving to your Kindle.

Note you can select to save to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be saved to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

Effect of TMG Addition on the Epitaxial Growth of 3C-SiC on Si(100) and Si(111) Using Hexamethyldisilane
Available formats
×

Save article to Dropbox

To save this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you used this feature, you will be asked to authorise Cambridge Core to connect with your Dropbox account. Find out more about saving content to Dropbox.

Effect of TMG Addition on the Epitaxial Growth of 3C-SiC on Si(100) and Si(111) Using Hexamethyldisilane
Available formats
×

Save article to Google Drive

To save this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you used this feature, you will be asked to authorise Cambridge Core to connect with your Google Drive account. Find out more about saving content to Google Drive.

Effect of TMG Addition on the Epitaxial Growth of 3C-SiC on Si(100) and Si(111) Using Hexamethyldisilane
Available formats
×
×

Reply to: Submit a response

Please enter your response.

Your details

Please enter a valid email address.

Conflicting interests

Do you have any conflicting interests? *