Hostname: page-component-5c6d5d7d68-pkt8n Total loading time: 0 Render date: 2024-08-18T08:31:55.364Z Has data issue: false hasContentIssue false
  • English
  • Français

Effect of Substrate Heating During Excimer Laser Annealing on Poly-Si TFT

Published online by Cambridge University Press:  15 February 2011

T. Noguchi ,
A. J. Tang ,
J. A. Tsai  and
R. Reif
T. Noguchi
Affiliation:
On leave from Sony Corp., Atsugi-shi, Japan.
A. J. Tang
Affiliation:
Microsystems Technology Laboratories, Massachusetts Institute of Technology, 60 Vassar St., Cambridge, MA
J. A. Tsai
Affiliation:
Microsystems Technology Laboratories, Massachusetts Institute of Technology, 60 Vassar St., Cambridge, MA
R. Reif
Affiliation:
Microsystems Technology Laboratories, Massachusetts Institute of Technology, 60 Vassar St., Cambridge, MA
Get access

Abstract

Single-shot ELA was performed on 45nm-thick amorphous Si films. With an increase in pulse energy density, the cystallinity improved drastically for both samples without heating and with heating at 400°C. Correspondingly, the characteristics of TFT fabricated using a low temperature process improved distinctly. The threshold voltage decreased depending on the decrease in gate voltage swing due to the improvement in crystallinity of Si films. Efficient single-pulse ELA of less than 250MJ/cm2 as the optimum condition for poly Si TFT has been attained as a result of saving an energy amount of 100mJ/cm2 by heating the substrate. Moreover, a uniform distribution of TFT characteristics across the wafer was obtained.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 403: Symposium I – Polycrystalline Thin Films: Structure, Texture, Properties and Applications II , 1995 , 357
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Sera, K., Okumura, F., Uchida, H., Itoh, S., Kaneko, S. and Hotta, K., IEEE Trans. Electron Dev., p.2868 (1989).Google Scholar
2. Morita, Y. and Noguchi, T., Jpn. J. Appl. Phys., 32, L309 (1989).Google Scholar
3. Kuriyama, H., Nohda, T., Ishida, S., Kuwahara, T., Noguchi, S., Kiyama, S. Tsuda, S. and Nakano, S., Jpn. J. Appl. Phys., 32, p. 6,190 (1993).Google Scholar
4. Chen, S., Boyce, J. B.., Wu, I-Wei, Chiang, A., Johnson, R. I., Anderson, G. B. and Ready, S. E., Proc. of AM LCD Symp., p.26, (1993).Google Scholar
5. Noguchi, T., Tajima, K. and Morita, Y., Proc. of Mat. Res. Soc. 146, p. 35 (1989).Google Scholar
6. Watanabe, H., Miki, H., Sugai, S., Kawasaki, K. and Kioka, T., Jpn.J. Appl. Phys. 33, 4,991 (1994).Google Scholar
7. Pichon, L., Raolt, F., Bonnaud, O., Pinel, J. and Sarret, M., IEEE Trans. Electron Dev., Lett., 16, 376 (1995).Google Scholar
8. Stehle, M., Godard, B., Murer, P., Brown, F-X., Bonnet, J. and Pigache, D., Proc. of Laser Advanced Materials Processing (LAMP '92) (1992).Google Scholar