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Effect of Slurry Temperature on Cu Chemical Mechanical Polishing with Different Oxidizing Agents

Published online by Cambridge University Press:  01 February 2011

Subrahmanya Mudhivarthi
Affiliation:
Department of Mechanical Engineering Nanomaterials and Nanomanufacturing Research Center, University of South Florida, Tampa, Florida-33620.
Ashok Kumar
Affiliation:
Department of Mechanical Engineering Nanomaterials and Nanomanufacturing Research Center, University of South Florida, Tampa, Florida-33620.
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Abstract

Chemical Mechanical Planarization (CMP) has evolved as one of the most critical and significant process in the manufacturing of semiconductor devices. Copper has become the material of choice for the interconnect wiring. The effect of heat generation at the interface is realized to be significant on copper CMP process. The increase in the oxidation rate of the chemical reaction and viscoelastic properties of polishing pads due to increase in temperature at the surface results in increased removal rates and change in planarization performance. In this research, the effect of temperature on the CMP performance using two most common oxidizing agents, KIO3 and H2O2 has been investigated using the CETRTM bench-top CMP tester. The coefficient of friction at the interface of polishing using both the oxidizers at different temperatures was monitored. The generated surface roughness post CMP was evaluated for samples polished using different oxidizing agents at different slurry temperatures. The AFM study was carried out using Digital InstrumentsTM D3100 instrument. This study is aimed at understanding the effect of temperature on the CMP process performance and the relative sensitivity of two most common oxidizers used in copper CMP towards temperature.

Type
Research Article
Copyright
Copyright © Materials Research Society 2005

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