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Effect of Sheet Electron-Beam Irradiation (SEBI) on Water Wettability of Mirror-Finished Si Wafer

Published online by Cambridge University Press:  10 February 2011

K. Mori ,
T. Okada ,
K. Oguri  and
Y. Nishi
K. Mori
Affiliation:
Department of Materials Science, Tokai University, 1117 Kitakaname, Hiratsuka, Kanagawa, 259–12 Japan, am026429@keyaki.cc.u-tokai.ac.jp
T. Okada
Affiliation:
Department of Materials Science, Tokai University, 1117 Kitakaname, Hiratsuka, Kanagawa, 259–12 Japan, am026429@keyaki.cc.u-tokai.ac.jp
K. Oguri
Affiliation:
Department of Materials Science, Tokai University, 1117 Kitakaname, Hiratsuka, Kanagawa, 259–12 Japan, am026429@keyaki.cc.u-tokai.ac.jp
Y. Nishi
Affiliation:
Department of Materials Science, Tokai University, 1117 Kitakaname, Hiratsuka, Kanagawa, 259–12 Japan, am026429@keyaki.cc.u-tokai.ac.jp
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Abstract

The influence of sheet electron beam irradiation ( SEBI ) on the water-wettability of the ( 100 ) plane on the Si wafer etched by hydrofluoric acid ( HF ) is investigated. The wettability energy is estimated from the contact angle of water. The SEBI treatment decreases the contact angle and increases the interfacial energy. Aging decreases the change in the interfacial energy. A rate process is inferred for the interfacial energy changes on the Si wafer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 477 , 1997 , 365
Copyright
Copyright © Materials Research Society 1997

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References

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