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Effect of Nitrogen Implants on Boron Transient Enhanced Diffusion

Published online by Cambridge University Press:  17 March 2011

Omer Dokumaci
IBM SRDC, Hopewell Junction, NY 12533
Paul Ronsheim
IBM SRDC, Hopewell Junction, NY 12533
Suri Hegde
IBM SRDC, Hopewell Junction, NY 12533
Dureseti Chidambarrao
IBM SRDC, Hopewell Junction, NY 12533
Lahir Shaik-Adam
Electrical Engineering Dept., University of Florida, Gainesville, FL 32611
Mark E. Law
Electrical Engineering Dept., University of Florida, Gainesville, FL 32611
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The effect of nitrogen implants on boron transient enhanced diffusion was studied for nitrogen-only, boron-only, and boron plus nitrogen implants. A boron buried layer was used as a detector for interstitial supersaturation in the samples. Boron dose ranged from 1×1014 to 1×1015 cm−2 and N2+ dose from 5×1013 and 5×1014 cm−2. The energies were chosen such that the location of the nitrogen and boron peaks matched. After the implants, RTA and low temperature furnace anneals were carried out. The diffusivity enhancements were extracted from the buried layer profiles by simulation. Nitrogen-only implants were found to cause significant enhanced diffusion on the buried boron layer. For lower doses, the enhancement of the nitrogen implant is about half as that of boron whereas the enhancements are equal at higher doses. Nitrogen coimplant with boron increases the transient enhanced diffusion of boron at low boron doses, which implies that nitrogen does not act as a strong sink for excess interstitials unlike carbon. At high boron doses, nitrogen co-implant does not significantly change boron diffusion. Sheet resistance measurements indicate that low nitrogen doses do not affect the activation of boron whereas high nitrogen doses either reduce the activation of boron or the mobility of the holes.

Research Article
Copyright © Materials Research Society 2000

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