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The Effect of Light Soaking on the Photoconductivity Response in A-SI:H

Published online by Cambridge University Press:  28 February 2011

Qiu Changhua ,
Wu Wenhao ,
Zhao Shifu  and
Han Daxing
Qiu Changhua
Affiliation:
Institute of Physics, Academia Sinica, P.O.Box 603, Beijing, PRC
Wu Wenhao
Affiliation:
Institute of Physics, Academia Sinica, P.O.Box 603, Beijing, PRC
Zhao Shifu
Affiliation:
Institute of Physics, Academia Sinica, P.O.Box 603, Beijing, PRC
Han Daxing
Affiliation:
Institute of Physics, Academia Sinica, P.O.Box 603, Beijing, PRC
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Abstract

The temperature dependences of response time tr and steady state photoconductivity (PC) were used to deduce the DOS at energies above the dark Fermi level. The tr and PC of annealled state A and light soaked state B were measured from 115K to 300K. Light soaking causes degradation of PC. Compared with state A, the PC response of state B is faster at low temperatures, but is slower at high temperatures. The difference between state A and state B was interpreted by a decrease of shallow traps and an increase of deep traps.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 70: Symposium E – Materials Issues in Amorphous-Semiconductor Technology , 1986 , 231
Copyright
Copyright © Materials Research Society 1986

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References

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