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Effect of Ion Energy on Structural and Chemical Properties of Tin Oxide Film in Reactive Ion-Assisted Deposition (R-Iad)

Published online by Cambridge University Press:  10 February 2011

Jun-Sik Cho
Affiliation:
Thin film Technology Research Center, Korea Institute of Science and Technology, Korea
Won-Kook Choi
Affiliation:
Thin film Technology Research Center, Korea Institute of Science and Technology, Korea
Ki Hyun Yoon
Affiliation:
Department of Ceramic Engineering, Yonsei University, Korea
J. Cho
Affiliation:
Thin film Technology Research Center, Korea Institute of Science and Technology, Korea
Young-Soo Yoon
Affiliation:
Thin film Technology Research Center, Korea Institute of Science and Technology, Korea
Hyung-Jin Jung
Affiliation:
Thin film Technology Research Center, Korea Institute of Science and Technology, Korea
Seok-Keun Koh
Affiliation:
Thin film Technology Research Center, Korea Institute of Science and Technology, Korea
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Abstract

Tin oxide films were deposited on in-situ heated Si (100)substrates using reactive ionassisted deposition and the effect of average impinging energy of oxygen ions on the crystalline structure and the stoichiometry of deposited films were examined. The transformation from SnO phase to SnO2 phase of the films was dependent on the change of the average impinging energy of oxygen ion (Ea), and the relative arrival ratio of oxygen to tin. Perfect oxidation of SnO2 was performed at Ea = 100, 125 eV/atom at as low as 400 Å substrate temperature. The composition (No/Nsn) of films increased from 1.21 to 1.89, and was closely related to the average impinging energy of oxygen ion. The surface morphology of the films was also investigated by scanning electron microscopy.

Type
Research Article
Copyright
Copyright © Materials Research Society 1998

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References

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Effect of Ion Energy on Structural and Chemical Properties of Tin Oxide Film in Reactive Ion-Assisted Deposition (R-Iad)
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