Hostname: page-component-848d4c4894-r5zm4 Total loading time: 0 Render date: 2024-07-04T21:36:35.723Z Has data issue: false hasContentIssue false
  • English
  • Français

The Effect of Indium Depletion on the Composition of OMVPE Grown GaInAs

Published online by Cambridge University Press:  28 February 2011

Paul D. Agnello ,
Percy B. Chinoy  and
Sorab K. Ghandhi
Paul D. Agnello
Affiliation:
Presently at the IBM T.J. Watson Research Center, Yorktown Heights, New York 10598
Percy B. Chinoy
Affiliation:
Electrical, Computer and Systems Engineering Department, Rensselaer Polytechnic Institute, Troy, New York 12180
Sorab K. Ghandhi
Affiliation:
Chemical Engineering Department, Rensselaer Polytechnic Institute, Troy, New York 12180
Get access

Abstract

This paper describes an experimental and theoretical study of indium depletion during the OMVPE growth of GaInAs. A mathematical model for mass, momentum and energy transfer, together with decomposition of the indium species was developed. The model was compared with experimental results over a range of growth parameters that included susceptor temperature, slope, reactor pressure and reactant partial pressures. Excellent agreement was obtained for a model based on the homogeneous decomposition of a triethylindium-arsine adduct to a stable product via an irreversible bimolecular reaction, with an activation energy of 11.9 kcal/gmol. The model may be used for optimization of compositional uniformity and growth over a wide range of reactor conditions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 160 , 1989 , 417
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1Agnello, P.D. and Ghandhi, S.K., J. Electrochem. Soc., B5 (1988) 1530.Google Scholar
2Field, R.J. and Ghandhi, S.K., J. Crys. Growth, 69 (1984) 581.Google Scholar
3Field, R.J. and Scholz, F., J. Crys. Growth, 88 (1988) 581.Google Scholar
4Nahory, R.E., Pollack, M.A., Johnston, W.D. Jr. and Barns, R.L., Appl. Phys. Lett., 33 (1978) 659.Google Scholar
5Saxena, R., Sardi, V., Oberstar, J., Hodge, L., Keever, M., Trott, G., Chen, K.L. and Moon, R., J. Crys. Growth, 77 (1986) 591.Google Scholar
6Coates, G.E. and Graham, J., J. Chem. Soc, (1963) 233.Google Scholar
7Chinoy, P.B., Agnello, P.D. and Ghandhi, S.K., J. Electron. Mater., 17 (1988) 493.Google Scholar