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Effect of Hydrogen Radical on Properties of Hydrogen in Hydrogenated Microcrystalline Silicon

Published online by Cambridge University Press:  17 March 2011

Takashi Itoh ,
Noriyuki Yamana ,
Hiroki Inouchi ,
Norimitsu Yoshida ,
Hidekuni Harada ,
Hiroaki Kondo ,
Kanta Yamamoto ,
Shuichi Nonomura  and
Shoji Nitta
Takashi Itoh
Affiliation:
Department of Electrical Engineering, Gifu University, 1-1 Yanaido, Gifu 501-1193, Japan
Noriyuki Yamana
Affiliation:
Department of Electrical Engineering, Gifu University, 1-1 Yanaido, Gifu 501-1193, Japan
Hiroki Inouchi
Affiliation:
Environment and Renewable Energy Systems, Graduate School of Engineering, Gifu University, 1-1 Yanaido, Gifu 501-1193, Japan
Norimitsu Yoshida
Affiliation:
Environment and Renewable Energy Systems, Graduate School of Engineering, Gifu University, 1-1 Yanaido, Gifu 501-1193, Japan
Hidekuni Harada
Affiliation:
Environment and Renewable Energy Systems, Graduate School of Engineering, Gifu University, 1-1 Yanaido, Gifu 501-1193, Japan
Hiroaki Kondo
Affiliation:
Department of Electrical Engineering, Gifu University, 1-1 Yanaido, Gifu 501-1193, Japan
Kanta Yamamoto
Affiliation:
Department of Electrical Engineering, Gifu University, 1-1 Yanaido, Gifu 501-1193, Japan
Shuichi Nonomura
Affiliation:
Environment and Renewable Energy Systems, Graduate School of Engineering, Gifu University, 1-1 Yanaido, Gifu 501-1193, Japan
Shoji Nitta
Affiliation:
Department of Electrical Engineering, Gifu University, 1-1 Yanaido, Gifu 501-1193, Japan
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Abstract

Hydrogenated microcrystalline silicon (μc-Si:H) films are prepared by hot-wire assisted plasma enhanced chemical vapor deposition, which controls the hydrogen radical density by filament temperatures, Tf, without changing other conditions. The effect of hydrogen radical on the properties of incorporated hydrogen into μc-Si:H films is studied using infrared absorption and gas effusion spectroscopies. The hydrogen concentration decreases with increasing Tf. The crystalline volume fraction, Xc, increases with Tf and shows a peak at Tf of 1850 °C. Integrated intensities of the modes near 2000 and 2100 cm-1 decrease with increasing Tf. Integrated intensity of the mode near 880 cm-1 shows almost same tendency of Xc. The effect of hydrogen radical on the properties of incorporated hydrogen into μc-Si:H films is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 609: Symposium A – Amorphous & Heterogeneous Silicon Thin Films – 2000 , 2000 , A6.4
Copyright
Copyright © Materials Research Society 2000

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References

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