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Effect of Ge-rich Si1−zGez Segregation on the Morphological Stability of NiSi1−uGeu Film Formed on Strained (001) Si0.8Ge0.2 Epilayer

Published online by Cambridge University Press:  17 March 2011

H.B. Yao
Affiliation:
Institute of Materials Research & Engineering, 3 Research Link, Singapore, 117602
D.Z. Chi
Affiliation:
Institute of Materials Research & Engineering, 3 Research Link, Singapore, 117602
S. Tripathy
Affiliation:
Institute of Materials Research & Engineering, 3 Research Link, Singapore, 117602
S.Y. Chow
Affiliation:
Institute of Materials Research & Engineering, 3 Research Link, Singapore, 117602
W.D. Wang
Affiliation:
Institute of Materials Research & Engineering, 3 Research Link, Singapore, 117602
S. J. Chua
Affiliation:
Institute of Materials Research & Engineering, 3 Research Link, Singapore, 117602
H.P. Sun
Affiliation:
Department of Materials Science, University of Michigan, Ann Arbor, MI 48109-2136
X.Q. Pan
Affiliation:
Department of Materials Science, University of Michigan, Ann Arbor, MI 48109-2136
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Abstract

The germanosilicidation of Ni on strained (001) Si0.8Ge0.2, particularly Ge segregation, grain boundary grooving, and surface morphology, during rapid thermal annealing (RTA) was studied. High-resolution cross-sectional transmission electron microscopy (HRXTEM) suggested that Ge-rich Si1−zGez segregation takes place preferentially at the germanosilicide/Si1−xGex interface, more specifically at the triple junctions between two adjacent NiSi1−uGeu grains and the underlying epi Si1−xGex, and it is accompanied with thermal grooving process. The segregation process accelerates the thermal grooving of NiSi1−uGeu grain boundaries at the interface. The segregation-accelerated grain boundary grooving has significant effect on the surface morphology of NiSi1−uGeu films in Ni-SiGe system.

Type
Research Article
Copyright
Copyright © Materials Research Society 2004

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Effect of Ge-rich Si1−zGez Segregation on the Morphological Stability of NiSi1−uGeu Film Formed on Strained (001) Si0.8Ge0.2 Epilayer
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Effect of Ge-rich Si1−zGez Segregation on the Morphological Stability of NiSi1−uGeu Film Formed on Strained (001) Si0.8Ge0.2 Epilayer
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