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Effect of Experimental Noise on Recovery of the Electronic Density of States from Transient Photocurrent Data

Published online by Cambridge University Press:  17 March 2011

Steve Reynolds ,
Charlie Main  and
Mariana J. Gueorguieva
Steve Reynolds
Affiliation:
School of Science and Engineering, University of Abertay Dundee, Bell Street, Dundee DD1 1HG, U.K.
Charlie Main
Affiliation:
School of Science and Engineering, University of Abertay Dundee, Bell Street, Dundee DD1 1HG, U.K.
Mariana J. Gueorguieva
Affiliation:
School of Science and Engineering, University of Abertay Dundee, Bell Street, Dundee DD1 1HG, U.K.
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Abstract

The effects of random noise on density of states determination from transient photocurrent data are examined by superimposing noise levels similar to those found experimentally (1% to 20%) on computer-simulated current-time data. Mathematically approximate methods based on Fourier and Laplace transformations are found to operate effectively at noise levels of up to 20%. Mathematically exact methods offer higher resolution, but this is compromised by greater susceptibility to noise. A Tikhonov regularisation method yields both high resolution and good noise tolerance.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 664: Symposium A – Amorphous and Heterogeneous Silicon-Based Films-2001 , 2001 , A22.6
Copyright
Copyright © Materials Research Society 2001

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References

REFERENCES

1. Main, C., Brüggemann, R., Webb, D.P. and Reynolds, S., Sol. St. Commun. 83, 401 (1992).Google Scholar
2. Reynolds, S., Main, C., Webb, D.P. and Rose, M.J., Phil. Mag. B80, 547 (2000).Google Scholar
3. Brüggemann, R., Main, C., Berkin, J. and Reynolds, S., Phil. Mag. B62, 29 (1990).Google Scholar
4. Gueorguieva, M.J., Main, C. and Reynolds, S, Mater. Res. Soc. Proc. 609 (in press).Google Scholar
5. Nagase, T., Kishimoto, K. and Naito, H., J. Appl. Phys. 86, 5026 (1999).Google Scholar
6. Main, C., Mater. Res. Soc. Proc. 467, 167 (1997).Google Scholar
7. Naito, H. and Okuda, M., J. Appl. Phys. 77, 3541 (1995).10.1063/1.358582Google Scholar
8. Ogawa, N., Nagase, T. and Naito, H., J. Non-Cryst. Sol. 266, 367 (2000).Google Scholar
9. Main, C., Berkin, J. and Merazga, A., in New Physical Problems in Electronic Materials, edited by Borissov, M., Kirov, N., Marshall, J.M. and Vavrek, A., (World Scientific, 1991) p.55.Google Scholar
10. Searle, T. (editor), Properties of Amorphous Silicon and its Alloys (IEE, 1998).Google Scholar
11. Reynolds, S., Main, C., Webb, D.P. and Grabtchak, S.J., J. Appl. Phys. 88, 278–282 (2000).Google Scholar
12. Hattori, K., Niwano, Y., Okamoto, H. and Hamakawa, Y., J. Non-Cryst. Sol. 137–138, 363 (1991).Google Scholar