Effect of Atomic Hydrogen on Impurity Reduction in Mombe-Grown GaAs
Published online by Cambridge University Press: 28 February 2011
In this paper, the effect of atomic hydrogen on carbon impurity incorporation during the metalorganic-molecular-beam-epitaxy (MOMBE) growth of GaAs is studied. Atomic hydrogen was introduced into the MOMBE chamber during the growth by cracking molecular hydrogen with a high temperature cracker cell. Atomic hydrogen appears to be effective in reducing the background doping level of MOMBE-grown GaAs, presumably by reacting with hydrocarbon radicals. Background doping levels as low as 4 × 1014 cm−3 and room temperature hole mobilities as high as 430 cm2/V-sec were achieved. This result demonstrates that it is feasible to grow high quality GaAs films in MOMBE without using AsH3 or a high flux of As4by introducing atomic hydrogen into the chamber during the growth.
- Research Article
- MRS Online Proceedings Library (OPL) , Volume 145: Symposium A – III-V Heterostructures for Electronic/Photonic Devices , 1989 , 57
- Copyright © Materials Research Society 1989