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The Effect of Annealing on Argon Implanted Edge Terminations for 4H-SiC Schottky Diodes

Published online by Cambridge University Press:  10 February 2011

A P Knights
Affiliation:
School of Electronic Engineering, Information Technology and Mathematics, University of Surrey, Guildford GU2 5XH, United Kingdom, a.knights@ee.surrey.ac.uk
D J Morrison
Affiliation:
Department of Electrical and Electronic Engineering, University of Newcastle, Newcastleupon- Tyne, United Kingdom, NEI 7RU.
N G Wright
Affiliation:
Department of Electrical and Electronic Engineering, University of Newcastle, Newcastleupon- Tyne, United Kingdom, NEI 7RU.
C M Johnson
Affiliation:
Department of Electrical and Electronic Engineering, University of Newcastle, Newcastleupon- Tyne, United Kingdom, NEI 7RU.
A G O'Neill
Affiliation:
Department of Electrical and Electronic Engineering, University of Newcastle, Newcastleupon- Tyne, United Kingdom, NEI 7RU.
S Ortolland
Affiliation:
Department of Electrical and Electronic Engineering, University of Newcastle, Newcastleupon- Tyne, United Kingdom, NEI 7RU.
K P Homewood
Affiliation:
School of Electronic Engineering, Information Technology and Mathematics, University of Surrey, Guildford GU2 5XH, United Kingdom, a.knights@ee.surrey.ac.uk
M A Lourenço
Affiliation:
School of Electronic Engineering, Information Technology and Mathematics, University of Surrey, Guildford GU2 5XH, United Kingdom, a.knights@ee.surrey.ac.uk
R M Gwilliam
Affiliation:
School of Electronic Engineering, Information Technology and Mathematics, University of Surrey, Guildford GU2 5XH, United Kingdom, a.knights@ee.surrey.ac.uk
P G Coleman
Affiliation:
School of Physics, University of East Anglia, Norwich, NR4 7TJ, United Kingdom.
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Abstract

The edge termination of SiC by the implantation of an inert ion species is used widely to increase the breakdown voltage of high power devices. We report results of the edge termination of Schottky barrier diodes using 30keV Ar+ ions with particular emphasis on the role of postimplant, relatively low temperature, annealing. The device leakage current measured at 100V is increased from 2.5nA to 7μA by the implantation of 30keV Ar+ ions at a dose of 1×1015 cm−2. This is reduced by two orders of magnitude following annealing at 600°C for 60 seconds, while a breakdown voltage in excess of 750V is maintained. The thermal evolution of the defects introduced by the implantation was monitored using positron annihilation spectroscopy (PAS) and deep-level-transient spectroscopy (DLTS). While a concentration of open-volume defects in excess of 1×1019cm−3 is measured using PAS in all samples, electrically active trapping sites are observed at concentrations ∼1×1015cm−3 using DLTS. The trap level is well-defined at Ec−Et = 0.9eV.

Type
Research Article
Copyright
Copyright © Materials Research Society 1999

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References

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The Effect of Annealing on Argon Implanted Edge Terminations for 4H-SiC Schottky Diodes
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