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Effect of AlGaN/GaN Strained Layer Superlattice Period on InGaN MQW Laser Diodes

Published online by Cambridge University Press:  03 September 2012

Monica Hansen
Affiliation:
Materials and Electrical and Computer Engineering DepartmentsUniversity of California, Santa Barbara, California 93106-5050
Amber C. Abare
Affiliation:
Materials and Electrical and Computer Engineering DepartmentsUniversity of California, Santa Barbara, California 93106-5050
Peter Kozodoy
Affiliation:
Materials and Electrical and Computer Engineering DepartmentsUniversity of California, Santa Barbara, California 93106-5050
Thomas M. Katona
Affiliation:
Materials and Electrical and Computer Engineering DepartmentsUniversity of California, Santa Barbara, California 93106-5050
Michael D. Craven
Affiliation:
Materials and Electrical and Computer Engineering DepartmentsUniversity of California, Santa Barbara, California 93106-5050
Jim S. Speck
Affiliation:
Materials and Electrical and Computer Engineering DepartmentsUniversity of California, Santa Barbara, California 93106-5050
Umesh K. Mishra
Affiliation:
Materials and Electrical and Computer Engineering DepartmentsUniversity of California, Santa Barbara, California 93106-5050
Larry A. Coldren
Affiliation:
Materials and Electrical and Computer Engineering DepartmentsUniversity of California, Santa Barbara, California 93106-5050
Steven P. DenBaars
Affiliation:
Materials and Electrical and Computer Engineering DepartmentsUniversity of California, Santa Barbara, California 93106-5050
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Abstract

AlGaN/GaN strained layer superlattices have been employed in the cladding layers of InGaN multi-quantum well laser diodes grown by metalorganic chemical vapor deposition (MOCVD). Superlattices have been investigated for strain relief of the cladding layer, as well as an enhanced hole concentration, which is more than ten times the value obtained for bulk AlGaN films. Laser diodes with strained layer superlattices as cladding layers were shown to have superior structural and electrical properties compared to laser diodes with bulk AlGaN cladding layers. As the period of the strained layer superlattices is decreased, the threshold voltage, as well as the threshold current density, is decreased. The resistance to vertical conduction through p-type superlattices with increasing superlattice period is not offset by the increase in hole concentration for increasing superlattice spacing, resulting in higher voltages.

Type
Research Article
Copyright
Copyright © Materials Research Society 1999

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References

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Effect of AlGaN/GaN Strained Layer Superlattice Period on InGaN MQW Laser Diodes
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