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Ecr Plasma Oxidation of Amorphous Silicon for Improvement of The Interface State in a Poly Silicon Thin Film Transistor

Published online by Cambridge University Press:  10 February 2011

Tae-Hyung Ihn
Dept. Of metall. Eng. Seoul nat'l univ.
Seok-Woon Lee
Dept. Of metall. Eng. Seoul nat'l univ.
Byung-Il Lee
Dept. Of metall. Eng. Seoul nat'l univ.
Yoo-Chan Jeon
Korea Lg Semicon Co. Ltd.
Seung-Ki Joo
Dept. Of metall. Eng. Seoul nat'l univ.
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A new oxidation process of the poly Silicon thin films has been demonstrated, where the amorphous silicon thin film was oxidized by ECR plasma at room temperature and then crystallized at 600°C for 30hrs(pre-oxidation). For comparison, amorphous silicon thin film was oxidized after crystallization(post-oxidation). The interface roughness turned out to be only 3Å in case of the pre-oxidation process, while the post-oxidation showed about 8Å of the interface roughness. The pre-oxidized TFT showed the constant mobility at high gate voltages, the post-oxidized TFT showed serious degradation of the mobility at high gate voltages.

Research Article
Copyright © Materials Research Society 1997

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