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Early Stages of Growth of Ge Quantum Dots

Published online by Cambridge University Press:  10 February 2011

P. Tognini ,
M. Patrini ,
A. Stella ,
D. Tonova ,
P. Cheyssac ,
R. Kofman ,
C. E. Bottani  and
M. Gemmi
P. Tognini
Affiliation:
Istituto Nazionale per la Fisica della Materia, Dipartimento di Fisica <>, Università di Pavia, Via Bassi 6, 27100 Pavia, Italy
M. Patrini
Affiliation:
Istituto Nazionale per la Fisica della Materia, Dipartimento di Fisica <>, Università di Pavia, Via Bassi 6, 27100 Pavia, Italy
A. Stella
Affiliation:
Istituto Nazionale per la Fisica della Materia, Dipartimento di Fisica <>, Università di Pavia, Via Bassi 6, 27100 Pavia, Italy
D. Tonova
Affiliation:
Istituto Nazionale per la Fisica della Materia, Dipartimento di Fisica <>, Università di Pavia, Via Bassi 6, 27100 Pavia, Italy
P. Cheyssac
Affiliation:
Laboratoire de Physique de la Matière Condensée, URA 190, Université de Nice Sophia Antipolis, Nice Cedex, France
R. Kofman
Affiliation:
Laboratoire de Physique de la Matière Condensée, URA 190, Université de Nice Sophia Antipolis, Nice Cedex, France
C. E. Bottani
Affiliation:
Istituto Nazionale per la Fisica della Materia, Dipartimento di Ingegneria Nucleare, Politecnico di Milano, Via Ponzio 34/3, 20133 Milano, Italy
M. Gemmi
Affiliation:
CNR-LAMEL, Via P. Gobetti 101, 40129 Bologna; INFM - Dip. di Fisica, Università di Bologna, Viale Berti Pichat 6, 40127 Bologna, Italy.
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Abstract

The present work is concentrated on the investigation of the initial stages of growth of Ge nanoparticles embedded in an amorphous A1203 matrix on suitable substrates. The growth technique is based on self-organization processes related to the balance of the interface energies involved. Combined data from complementary optical techniques (absorption, Raman scattering, spectroscopic ellipsometry) give evidence of a behaviour which can be ascribed to the existence of a wetting layer, not detectable by conventional transmission microscopy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 571: Symposium W – Semiconductor Quantum Dots , 1999 , 343
Copyright
Copyright © Materials Research Society 2000

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References

REFERENCES

1. <<Semiconductor Quantum Dots)), MRS Bulletin 23, 2 (1998) and refs. therein.Google Scholar
2. Sondergard, E., Kofman, R., Cheyssac, P., Stella, A., Surf. Sci. 364, 467 (1996).10.1016/0039-6028(96)00657-7Google Scholar
3. Gladkikh, N. I. et al. , Izv. Acad. Nauk SSR Met. 5, 196 (1982); N. Eustathopoulos, Internat. Met. Rev. 28, 189 (1983).Google Scholar
4. Tognini, P., Andreani, L. C., Geddo, M., Stella, A., Cheyssac, P., Kofman, R. and Migliori, A., Phys. Rev. B 53, 6992 (1996).10.1103/PhysRevB.53.6992Google Scholar
5. Stella, A., Bottani, C. E., Cheyssac, P., Kofman, R., Milani, P., Tognini, P., Mat. Res. Soc. Symp. Proc. 452, 249 (1997).10.1557/PROC-452-249Google Scholar
6. Heavens, O. S., Optical properties of thin solid films, Butterworths, London, 1968.Google Scholar