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Dual-Chamber Plasma Deposition of a-Si:H Solar Cells at High Rates Using Disilane

Published online by Cambridge University Press:  28 February 2011

G. Rajeswaran ,
P.E. Vanier ,
R.R. Corderman  and
F.J. Kampas
G. Rajeswaran
Affiliation:
Metallurgy and Materials Science Division, Brookhaven National Laboratory, Upton, NY 11973
P.E. Vanier
Affiliation:
Metallurgy and Materials Science Division, Brookhaven National Laboratory, Upton, NY 11973
R.R. Corderman
Affiliation:
Metallurgy and Materials Science Division, Brookhaven National Laboratory, Upton, NY 11973
F.J. Kampas
Affiliation:
Metallurgy and Materials Science Division, Brookhaven National Laboratory, Upton, NY 11973
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Abstract

The use of a separated chamber deposition system for the fabrication of a-Si:H solar cells from disilane at high deposition rates results in a substantial improvement in short circuit current compared to that obtained from a single-chamber system. The spectral responses of cells fabricated in the dual-chamber mode are compared to those made in the single-chamber mode. The results are interpreted by assuming that the rate of removal of boron contaminants from the chamber is independent of deposition rate.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 49: Symposium F – Materials Issues in Applications of Amorphous Silicon Technology , 1985 , 27
Copyright
Copyright © Materials Research Society 1985

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References

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