Hostname: page-component-76fb5796d-vfjqv Total loading time: 0 Render date: 2024-04-26T11:32:06.020Z Has data issue: false hasContentIssue false
  • English
  • Français

Doped Amorphous and Microcrystalline Silicon Carbide as Wide Band-Gap Material

Published online by Cambridge University Press:  25 February 2011

F. Demichelis ,
C.F. Pirri ,
E. Tresso  and
P. Rava
F. Demichelis
Affiliation:
Dipartimento di Fisica, Politecnico - C. so Duca degli Abruzzi 24, 10129 Torino, (Italy)
C.F. Pirri
Affiliation:
Dipartimento di Fisica, Politecnico - C. so Duca degli Abruzzi 24, 10129 Torino, (Italy)
E. Tresso
Affiliation:
Dipartimento di Fisica, Politecnico - C. so Duca degli Abruzzi 24, 10129 Torino, (Italy)
P. Rava
Affiliation:
Elettrorava S.p.A., 10040 Savonera Torino, (Italy)
Get access

Extract

Amorphous and microcrystalline silicon carbide, undoped and doped, are promising materials as wide band gap semiconductors (Eg > 2 eV). In the present work results on nydrogenated and fluorinated a-SiC and uc-SiC films intrinsic, B or P doped are reported. Energy gap higher than 2 eV are obtained together with electrical dark conductivities in the range 10-12 -10-2 Ω-1cm-1

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 242: Symposium G – Wide Band-Gap Semiconductors , 1992 , 675
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

(1) Anderson, D. A. and Spear, W. E. - Phil. Mag. 35, 1 (1977)Google Scholar
(2) Sasaki, K., Furukawa, S. and Ratiman, M. M. - 1985 Int. Electron Devices Meeting - Washington D.C. Tech. Dig., p. 294 Google Scholar
(3) Hamakawa, Y. and Tawada, Y. - Int. J. Solar Energy 1, 125 (1982)CrossRefGoogle Scholar
(4) Tawada, Y., Kondo, M., Okamoto, H. and Hamakawa, Y. - Proc. 15th IEEE Photovoltaic Specialist Conference, Florida (IEEE New York, 1981) p. 245 Google Scholar
(5) Demichelis, F., Pirri, C. F., Tresso, E., Della Mea, G., Rigato, V. and Rava, P. - Semicond. Sci. and Technol. 6 (1991 in press)Google Scholar
(6) Demichelis, F., Pirri, C.F., Tresso, E. and Stapinski, T. -Journ. Appl. Phys. (submitted)Google Scholar
(7) Saito, N. - Phil. Mag. B 55, 615 (1987)Google Scholar
(8) Hattori, Y., Kruangam, D., Toyama, T., Okamoto, H. and Hamakawa, Y. - Journ. Non-Cryst. Solids 97–98, 1079 (1987)Google Scholar
(9) Demichelis, F., Pirri, C. F. and Tresso, E. - Phil. Mag. B (in press)Google Scholar
(10) Demichelis, F., Pirri, C. F., Tresso, E., della Mea, G., Rigato, V. and Rava, P. - Mat. Res. Soc. Symp. Proc., vol. 219, p. 793 (1991)Google Scholar
(11) Goldstein, B., Dickson, C. R., Fauchet, P. M. - Appl. Phys. Lett. 52, 2672 (1988)CrossRefGoogle Scholar
(12) DasGupta, D., Demichelis, F., Pirri, C. F., Tagliaferro, A. - Phys. Rev B 43, 2131, (1991)Google Scholar
(13) Matsuda, A., Yamasaki, S., Nakagawa, K., Okushi, H., Tanaka, K., Izima, S., Matsuda, M. and Yamamoto, H. - Jap. J. Appl. Phys. 19, 1305 (1980)Google Scholar
(14) Guimaraes, J. L., Martins, R., Fortunate, E., Ferreira, I., Santos, M., Carvalho, N. - Mat. Res. Soc. Symp. Proc., vol. 118, p. 617 (1988)Google Scholar
(15) Demichelis, F., Pirri, C.F., Tresso, E., Rava, P., Boarino, L., Stapinski, T. - Proc 10th E.C. Photov. Solar En. Conf. (Lisbona, 1991) p. 121 Google Scholar