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Doped Amorphous and Microcrystalline Silicon Carbide as Wide Band-Gap Material

Published online by Cambridge University Press:  25 February 2011

F. Demichelis
Affiliation:
Dipartimento di Fisica, Politecnico - C. so Duca degli Abruzzi 24, 10129 Torino, (Italy)
C.F. Pirri
Affiliation:
Dipartimento di Fisica, Politecnico - C. so Duca degli Abruzzi 24, 10129 Torino, (Italy)
E. Tresso
Affiliation:
Dipartimento di Fisica, Politecnico - C. so Duca degli Abruzzi 24, 10129 Torino, (Italy)
P. Rava
Affiliation:
Elettrorava S.p.A., 10040 Savonera Torino, (Italy)
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Amorphous and microcrystalline silicon carbide, undoped and doped, are promising materials as wide band gap semiconductors (Eg > 2 eV). In the present work results on nydrogenated and fluorinated a-SiC and uc-SiC films intrinsic, B or P doped are reported. Energy gap higher than 2 eV are obtained together with electrical dark conductivities in the range 10-12 -10-2 Ω-1cm-1

Type
Research Article
Copyright
Copyright © Materials Research Society 1992

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References

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