Skip to main content Accessibility help
×
Home
Hostname: page-component-59b7f5684b-j5sqr Total loading time: 0.29 Render date: 2022-09-29T21:57:48.293Z Has data issue: true Feature Flags: { "shouldUseShareProductTool": true, "shouldUseHypothesis": true, "isUnsiloEnabled": true, "useRatesEcommerce": false, "displayNetworkTab": true, "displayNetworkMapGraph": false, "useSa": true } hasContentIssue true

Dopant and Self-Diffusion in Extrinsic n-Type Silicon Isotopically Controlled Heterostructures

Published online by Cambridge University Press:  01 February 2011

Hughes H. Silvestri
Affiliation:
Department of Materials Science and Engineering, University of California, Berkeley, CA94720 Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720
Ian D. Sharp
Affiliation:
Department of Materials Science and Engineering, University of California, Berkeley, CA94720 Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720
Hartmut A. Bracht
Affiliation:
Institut für Materialphysik, Universität Münster, Germany
Sam P. Nicols
Affiliation:
Department of Materials Science and Engineering, University of California, Berkeley, CA94720 Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720
Jeff W. Beeman
Affiliation:
Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720
John Hansen
Affiliation:
Institute of Physics and Astronomy, University of Aarhus, Denmark
Arne Nylandsted-Larsen
Affiliation:
Institute of Physics and Astronomy, University of Aarhus, Denmark
Eugene E. Haller
Affiliation:
Department of Materials Science and Engineering, University of California, Berkeley, CA94720 Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720
Get access

Abstract

We present experimental results of dopant- and self-diffusion in extrinsic silicon doped with As. Multilayers of isotopically controlled 28Si and natural silicon enable simultaneous analysis of 30Si diffusion into the 28Si enriched layers and dopant diffusion throughout the multilayer structure. In order to suppress transient enhanced self- and dopant diffusion caused by ion implantation, we adopted a special approach to dopant introduction. First, an amorphous 250-nm thick Si layer was deposited on top of the Si isotope heterostructure. Then the dopant ions were implanted to a depth such that all the radiation damage resided inside this amorphous cap layer. These samples were annealed for various times and temperatures to study the impact of As diffusion and doping on Si self-diffusion. The Si self-diffusion coefficient and the dopant diffusivity for various extrinsic n-type conditions were determined over a wide temperature range. We observed increased diffusivities that we attribute to the increase in the concentration of the native defect promoting the diffusion.

Type
Research Article
Copyright
Copyright © Materials Research Society 2002

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Packan, P.A., MRS Bulletin 25 (6) 18 (2000).CrossRefGoogle Scholar
2. Fahey, P.M., Griffin, P.B., and Plummer, J.D., Reviews of Modern Physics, 61 289 (1989).CrossRefGoogle Scholar
3. Shockley, W. and Moll, J.L., Phys. Rev. 119 1480 (1960).CrossRefGoogle Scholar
4. Bracht, H., Haller, E.E., and Clarke-Phelps, R., Phys. Rev. Lett. 81 393 (1998).CrossRefGoogle Scholar
5. Ural, A., Griffin, P.B., and Plummer, J.D., Phys. Rev. Lett. 83 3454 (1999).CrossRefGoogle Scholar
6. Uematsu, M., J. Appl. Phys. 82 2228 (1997).CrossRefGoogle Scholar
7. Eaglesham, D.J., Stolk, P.A., Gossmann, H.-J., Poate, J.M., Appl. Phys. Lett. 65(18) 2305 (1994).CrossRefGoogle Scholar
8. Kelly, P.J., Car, R., Phys. Rev. B 45 6543 (1992).CrossRefGoogle Scholar
9. Masters, B.J. and Fairfield, J.M., J. Appl. Phys. 40 2390 (1969).CrossRefGoogle Scholar
10. Nakabayashi, Y., Osman, H.I., Segawa, T., Saito, K., Matsumoto, S., Murota, J., Wada, K., Abe, T., Jpn. J. Appl. Phys. 40 L181 (2001).CrossRefGoogle Scholar
11. Ural, A., Griffin, P.B., and Plummer, J.D., Appl. Phys. Lett. 79 4328 (2001).CrossRefGoogle Scholar
12. Morin, F.J. and Maita, J.P., Phys. Rev. 96 28 (1954).CrossRefGoogle Scholar
13. Sharp, I.D., et al., (these proceedings).Google Scholar

Save article to Kindle

To save this article to your Kindle, first ensure coreplatform@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about saving to your Kindle.

Note you can select to save to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be saved to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

Dopant and Self-Diffusion in Extrinsic n-Type Silicon Isotopically Controlled Heterostructures
Available formats
×

Save article to Dropbox

To save this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you used this feature, you will be asked to authorise Cambridge Core to connect with your Dropbox account. Find out more about saving content to Dropbox.

Dopant and Self-Diffusion in Extrinsic n-Type Silicon Isotopically Controlled Heterostructures
Available formats
×

Save article to Google Drive

To save this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you used this feature, you will be asked to authorise Cambridge Core to connect with your Google Drive account. Find out more about saving content to Google Drive.

Dopant and Self-Diffusion in Extrinsic n-Type Silicon Isotopically Controlled Heterostructures
Available formats
×
×

Reply to: Submit a response

Please enter your response.

Your details

Please enter a valid email address.

Conflicting interests

Do you have any conflicting interests? *