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Dominant Factor of Squareness in P-E Hsyteresis Loops of MOCVD-PZT Films

Published online by Cambridge University Press:  26 February 2011

Hiroshi Funakubo
Affiliation:
funakubo@iem.titech.ac.jp, Tokyo Institute of Technology, J2-43, 4259 Nagatsuta-cho, midori-ku, Yokohama, Kanagawa, 226-8502, Japan
Akihiro Sumi
Affiliation:
sumi@iem.titech.ac.jp, Japan
Hitoshi Morioka
Affiliation:
morioka@iem.titech.ac.jp, Japan
Shoji Okamoto
Affiliation:
okamoto@iem.titech.ac.jp, Japan
Shintaro Yokoyama
Affiliation:
yokoyama@iem.titech.ac.jp, Japan
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Abstract

The effects of P-E properties of epitaxially grown rhombohedral Pb(Zr,Ti)O3 film on the film thickness and temperature were systematically investigated. (100)-oriented rhombohedral Pb(Zr0.65Ti0.35)O3 films with 50 - 3200 nm in thickness were grown on (100)cSrRuO3//(100)SrTiO3 substrates by metalorganic chemical vapor deposition (MOCVD). The ratio of the remanent polarization (Pr) to saturation polarization (Psat), the Pr/Psat ratio, at room temperature decreased with decreasing the film thickness. Moreover, the Pr/Psat ratio at 10 K of 180-nm-thick films was smaller than that of 3200-nm-thick film and dropped at lower temperature with increasing the film thickness. These results suggest that the small Pr/Psat ratio of thin film at room temperature is originated to both of small Pr/Psat ratio even at 10K and their drop starting at lower temperature when the temperature increased.

Type
Research Article
Copyright
Copyright © Materials Research Society 2006

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