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Dlts-Studies on the “New Oxygen Donor” in Heat Treated and Hydrogenated CZ-Grown SI

Published online by Cambridge University Press:  28 February 2011

Karlheinz Hölzlein
Affiliation:
Holzlein, Pensl, Schulz University of Erlangen, Inst. of Applied Physics, GlOckstrasse 9, D-8520 Erlangen, FRG
G. Pensl
Affiliation:
Holzlein, Pensl, Schulz University of Erlangen, Inst. of Applied Physics, GlOckstrasse 9, D-8520 Erlangen, FRG
M. Schulz
Affiliation:
Holzlein, Pensl, Schulz University of Erlangen, Inst. of Applied Physics, GlOckstrasse 9, D-8520 Erlangen, FRG
N. M. Johnson
Affiliation:
Johnson Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
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Abstract

Cz-grown Si samples containing a high concentration of oxygen are investigated after various processing steps by DLTS. Heat treatments ranging from 500°C–1000°C are performed to study the formation and annihilation of the “New Oxygen Donor” (ND) traps. Hydrogenation at low temperature leads to a reduction of the ND trap states. The experimental results confirm the “SiOx Interface Model” which assumes two differing types of interfacerelated states.

Type
Research Article
Copyright
Copyright © Materials Research Society 1986

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References

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Dlts-Studies on the “New Oxygen Donor” in Heat Treated and Hydrogenated CZ-Grown SI
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