Hostname: page-component-5c6d5d7d68-wbk2r Total loading time: 0 Render date: 2024-08-16T14:09:23.651Z Has data issue: false hasContentIssue false
  • English
  • Français

Distribution of Gap States in Highly Photosensitive a-SiC:H

Published online by Cambridge University Press:  25 February 2011

S. Akita ,
Y. Nakayama ,
M. Yamano  and
T. Kawamura
S. Akita
Affiliation:
College of Engineering, University of Osaka Prefecture Mozu-Umemachi, Sakai, Osaka 591, Japan
Y. Nakayama
Affiliation:
College of Engineering, University of Osaka Prefecture Mozu-Umemachi, Sakai, Osaka 591, Japan
M. Yamano
Affiliation:
College of Engineering, University of Osaka Prefecture Mozu-Umemachi, Sakai, Osaka 591, Japan
T. Kawamura
Affiliation:
College of Engineering, University of Osaka Prefecture Mozu-Umemachi, Sakai, Osaka 591, Japan
Get access

Abstract

The effect of carbon incorporation into a-Si:H has been investigated in terms of gap states. The shallow and deep states are measured by a combination of two methods of the time-of-flight and the depletion discharge transient spectroscopy. The results show that the carbon incorporation of 10Z into a-Si:H leads to a slight increase in the conduction-band tail states and an extention of the deep states distribution. However, the increase in the shallow states affects little change in the electron transport properties. The origin of the deep states is also discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 149: Symposium E – Amorphous Silicon Technology - 1989 , 1989 , 167
Copyright
Copyright © Materials Research Society 1989

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1) Akita, S., Wakita, K., Nakayama, Y. and Kawamura, T.: in Amorphous and Crystalline Silicon Carbide, edited by Harris, G. L. and Yang, C. Y.-W. (Springer-Verlag Berlin, Heidelberg, 1989), p. 77.Google Scholar
2) Nakayama, Y., Akita, S., Wakita, K. and Kawamura, T.: Mat. Res. Symp. Proc. 118 (1988) 73.CrossRefGoogle Scholar
3) Lang, D. V.: J. Appl. Phys. 45 (1974) 3023.CrossRefGoogle Scholar
4) Ohkushi, H. and Tokumaru, Y.: Jpn. J. Appl. Phys. 19 (1980) L335.CrossRefGoogle Scholar
5) Nakayama, Y., Akita, S. and Kawamura, T.: Jpn. J. Appl. Phys. 27 (1988) L320.CrossRefGoogle Scholar
6) Barclay, R. P., Seynhaeve, G., Adriaenssens, G. J. and Marshall, J. M.: Mat. Res. Symp. Proc. 118 (1988) 519.CrossRefGoogle Scholar
7) Tiedje, T.: in Semiconductors and Semimetals Vol.27, Part C, edited by Pankove, J. I. (Academic Press, Orlando, Florida, 1984), p. 207.Google Scholar
8) Melnyk, A. R.: J. Non-Cryst. Solids 35/36 (1980) 837.CrossRefGoogle Scholar
9) Abkowitz, M., Jansen, F. and Melnyk, A. R.: Philos. Mag. B 51 (1985) 405.CrossRefGoogle Scholar
10) Nakayama, Y., Kita, H., Takahashi, T., Akita, S. and Kawamura, T.: J. Non-Cryst. Solids 97/98 (1987) 743.CrossRefGoogle Scholar
11) Hayashi, T., Miyazaki, S. and Hirose, M.: Jpn. J. Appl. Phys. 27 (1988) L314 CrossRefGoogle Scholar