Hostname: page-component-77c89778f8-vpsfw Total loading time: 0 Render date: 2024-07-17T13:54:05.069Z Has data issue: false hasContentIssue false
  • English
  • Français

Dislocation Arrays in Epitaxial Interfaces.

Published online by Cambridge University Press:  28 February 2011

R. Beanland  and
R. C. Pond
R. Beanland
Affiliation:
Department of Materials Science and Engineering, The University of Liverpool, P.O. Box 147, Liverpool, L69 3BX, England
R. C. Pond
Affiliation:
Department of Materials Science and Engineering, The University of Liverpool, P.O. Box 147, Liverpool, L69 3BX, England
Get access

Abstract

A method for analysing the form of dislocation arrays which accommodate misfit at epitaxial interfaces based on the Frank-Bilby expression of the dislocation content of an interface is presented. Emphasis is placed on the deformation of a crystal in the presence of a dislocation array, and ease of formulation through use of an orthogonal reference frame. Several aspects of epitaxial growth are subsequently addressed, including the uniqueness of a dislocation array accommodating a given misfit. In the case of growth on vicinal cubic surfaces, it is shown that dislocations generated to relieve misfit may also lead to misorientation of the overlayer. From experimental measurements of dislocation densities using transmission electron microscopy, it is possible to calculate the state of strain in a metastable misfitting epitaxial layer. When misfit is not isotropic in the interface (such as for silicon or niobium grown on sapphire) it is shown that dislocation line directions may not lie along low index directions in either crystal, a point which is particularly important with regard to studies of interfacial structure by high resolution electron microscopy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 198: Symposium V – Epitaxial Heterostructures , 1990 , 111
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Hirth, and Lothe, , Theory of dislocations, (McGraw-Hill, New York, 1968) Section 19.2, p.643.Google Scholar
2. Sargent, C.M. and Purdy, G.R., Phil. Mag. 32, 27, (1975)Google Scholar
3. Ponce, F.A., Appl. Phys. Lett. 41, 371, (1982).Google Scholar
4. Aindow, M., Batstone, J.L., Pfeiffer, L., Phillips, J.M. and Pond, R.C., in Characterisation of thg Structure and Chemistry of Defects in Materials, edited by Larson, B.C., Ruhle, M., and Seidmann, D.N., (Mater. Res. Soc. Proc. 138, Boston, MA 1989) pp. 373–378.Google Scholar
5. Knowles, K.M., Alexander, K.B., Somekh, R.E. and Stobbs, W. M., Inst. Phys. Conf. 20, 245, (1987)Google Scholar