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Device Simulation of a Unipolar Gamma-Ray Detector

Published online by Cambridge University Press:  10 February 2011

E. Y. Lee
Affiliation:
Sandia National Laboratories, Livermore, CA 94551, eylee@sandia.gov
J. C. Lund
Affiliation:
Sandia National Laboratories, Livermore, CA 94551, eylee@sandia.gov
N. R. Hilton
Affiliation:
University of Arizona, Tucson, AZ 85724
B. A. Brunett
Affiliation:
Sandia National Laboratories, Livermore, CA 94551, eylee@sandia.gov Carnegie Mellon University, Pittsburgh, PA 15213
R. B. James
Affiliation:
Sandia National Laboratories, Livermore, CA 94551, eylee@sandia.gov
Corresponding
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Abstract

The pulse height spectra from a new kind of unipolar gamma-ray detectors were predicted using a new three-dimensional simulation program developed at Sandia National Laboratories. The detectors were fabricated at Sandia and RMD Inc., and tested at Sandia. They were fabricated from Cd1-x.ZnxTe crystals and they were electron-transport-only devices. For the simulation, a successive overrelaxation method was used to determine the three-dimensional internal electric field within a detector, and to find the weighting potentials for the anode and the cathode. Uniform irradiation and ionization from a 137Cs source was assumed, and the charge transport and the signal induction within the detector were numerically computed using the appropriate materials and design parameters. The simulation gave excellent agreement with experimental pulse height spectra, and it demonstrated the power of such a simulation to correlate the materials parameters and the device design to the actual detector performance.

Type
Research Article
Copyright
Copyright © Materials Research Society 1998

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References

1. For a recent review, see Semiconductors for Room-Temperature Radiation Detector Applications, Proceedings of Materials Research Society Symposium, Vol.302, edited by James, R. B., Schlesinger, T. E., Siffert, Paul, and Franks, Larry (Material Research Society, Pittsburgh, Pennsylvania, 1993).Google Scholar
2. For a discussion of the Frisch grid concept, which is akin to the unipolar device concept, see Knoll, G. F., Radiation Detection and Measurement, John Wiley & Sons, New York, 1979, pp. 178.Google Scholar
3. Luke, P. N., Appl. Phys. Lett. 65, 2884(1994).Google Scholar
4. Lund, J. C. (patent pending).Google Scholar
5. Lund, J. C., Lee, E. Y., Hilton, N. R., Brunett, B. A., Olshner, F., Bennet, P., Shah, K. S., Hermon, H., Viles, T. P., and James, R. B. (to be published).Google Scholar
6. Press, W. H., Teukolsky, S. A., Vetterling, W. T., Flannery, B. P., Numerical Recipes in C, 2nd edition, Cambridge University Press, New York, 1992, pp. 866.Google Scholar
7. See, for example, Squillante, M. in Semiconductors for Room-Temperature Radiation Detector Applications, Proceedings of Materials Research Society Symposium, Vol.302, edited by James, R. B., Schlesinger, T. E., Siffert, Paul, and Franks, Larry (Material Research Society, Pittsburgh, Pennsylvania, 1993).Google Scholar

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