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DEPTH-DEPENDENT MIXING OF AN AlAs-GaAs SUPERLATTICE BY ION IMPLANTATION

Published online by Cambridge University Press:  28 February 2011

S.A. SCHWARZ
Affiliation:
Bell Communications Research, Inc., Murray Hill, NJ 07974
T. VENKATESAN
Affiliation:
Bell Communications Research, Inc., Murray Hill, NJ 07974
R. BHAT
Affiliation:
Bell Communications Research, Inc., Murray Hill, NJ 07974
M. KOZA
Affiliation:
Bell Communications Research, Inc., Murray Hill, NJ 07974
H.W. YOON
Affiliation:
Bell Communications Research, Inc., Murray Hill, NJ 07974
Y. ARAKAWA
Affiliation:
California Institute of Technology, Pasadena, CA 91125
P. MEI
Affiliation:
Serin Physics Laboratory, Rutgers University, Piscataway, NJ 08854
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Abstract

The effects of implantation and annealing on an AlAs-GaAs superlattice grown by OMCVD is examined with SIMS (secondary ion mass spectrometry). Several 180 keV 28Si+ implants, with doses ranging from 3 × 1013 to 3 × 1015 cm−2, are examined before and after a three hour 850 C anneal. While the implantation by itself causes some intermixing in the vicinity of the projected range, the 850 C thermal anneal induces significant mixing at depths well beyond the implant range. In the region of maximum implant damage, however, the post-thermal mixing effect is inhibited. Depth dependent diffusion lengths of Al and Si are derived from the SIMS data. The diffusion coefficient of Si is markedly enhanced in the mixed regions.

Type
Research Article
Copyright
Copyright © Materials Research Society 1986

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References

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DEPTH-DEPENDENT MIXING OF AN AlAs-GaAs SUPERLATTICE BY ION IMPLANTATION
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