Hostname: page-component-7479d7b7d-k7p5g Total loading time: 0 Render date: 2024-07-12T10:17:13.379Z Has data issue: false hasContentIssue false
  • English
  • Français

Deposition of Ceramic Films by A Novel Pulsed-Gas Mocvd Technique

Published online by Cambridge University Press:  25 February 2011

Kenneth A. Aitchison ,
James D. Barrie  and
Joseph Ciofalo
Kenneth A. Aitchison
Affiliation:
The Aerospace Corporation, M2/248, P.O. Box 92957, Los Angeles, CA, 90009.
James D. Barrie
Affiliation:
The Aerospace Corporation, M2/248, P.O. Box 92957, Los Angeles, CA, 90009.
Joseph Ciofalo
Affiliation:
The Aerospace Corporation, M2/248, P.O. Box 92957, Los Angeles, CA, 90009.
Get access

Abstract

Metal-Organic Chemical Vapor Deposition (MOCVD) is a versatile technique for the deposition of thin films of metals, semiconductors and ceramics. Commonly used hot wall flow-reactor designs suffer from a number of limitations. Chemical processes occurring in these reactors typically include a combination of homogeneous (gas-phase) and heterogeneous (gas-surface) reactions. These complex conditions are difficult to model and are poorly understood. In addition, flow reactors use large quantities of expensive precursor materials and are not well suited to the formation of abrupt interfaces. We report here a novel MOCVD technique which addresses these problems and enables a more thorough mechanistic understanding of the heterogeneous decomposition pathways of metal-organic compounds. This technique, the low-pressure pulsed gas method, has been demonstrated to provide high deposition rates with excellent control over film thickness. The deposition conditions effectively eliminate homogeneous processes allowing surface-mediated reactions to dominate. This decoupling of gas-phase chemistry from film deposition allows a better understanding of reaction mechanisms and provides better control over film growth. Both single metal oxides and binary oxide systems have been investigated on a variety of substrate materials. Effects of precursor chemistry, substrate surface, temperature and pressure on film composition and morphology will be discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 271: Symposium N – Better Ceramics Through Chemistry V , 1992 , 957
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Manasevit, H. and Simpson, W. I., J. Electrochem. Soc. 116, 1725 (1969).Google Scholar
2. Bradley, D. C., Mehrotra, R. C., and Gaur, D. P., Metal Alkoxides, (Academic Press, 1978).Google Scholar
3. Van Suchtelen, J., Hogenkamp, J. E. M., Van Sark, W. G. J. H. M., and Giling, L. J., J. Crystal Growth, 93, 201 (1988).Google Scholar
4. Van Sark, W. G. J. H. M., Van Suchtelen, J., Hogenkamp, J. E. M., DeCroon, M. H. J. M., Velthuis, R. A. and Giling, L. J., J. Crystal Growth, 102, 1 (1990).Google Scholar
5. Fitzgibbons, E. T., Sladek, K. J., and Hartwig, W. H., J. Electrochem. Soc., 119, 92 (1972).Google Scholar
6. Siefering, K. L. and Griffin, G. L., J. Electrochem. Soc., 14, 814 (1990).Google Scholar
7. S. I., Boldish, Ciofalo, J. S., and Wendt, J. P., J. Electron. Mater., 14, 587 (1985).Google Scholar
8. Bradley, D. C., J. Chem. Soc. A, 5020 (1952).Google Scholar
9. Takahashi, Y., Suzuki, H., and Nasu, M., J. Chem. Soc. Faraday Trans. 1, 81, 3117 (1985).Google Scholar
10. Eversteijn, F. C., Phillips Res. Repts., 21, 379 (1966).Google Scholar
11. Li, P. C., and Tsang, P. J., J. Electrochem. Soc., 129, 165 (1982).CrossRefGoogle Scholar
12. Kalidindi, S. R., and Desu, S. B., J. Electrochem. Soc., 137, 624 (1990).Google Scholar