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The Deposition of Aluminum and Aluminum Boride Thin Films by Aluminaborane Cluster Compounds

Published online by Cambridge University Press:  25 February 2011

John A. Glass Jr.
Affiliation:
Department of Chemistry and the Center for Molecular Electronics, Syracuse University, Syracuse, New York 13244-4100
Shreyas Kher
Affiliation:
Department of Chemistry and the Center for Molecular Electronics, Syracuse University, Syracuse, New York 13244-4100
Stephen D. Hersee
Affiliation:
General Electric Company, Electronics Laboratory, Syracuse, New York 13221
G. Ramseyer
Affiliation:
General Electric Company, Electronics Laboratory, Syracuse, New York 13221
James T. Spencer
Affiliation:
Department of Chemistry and the Center for Molecular Electronics, Syracuse University, Syracuse, New York 13244-4100
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Abstract

The preparation of aluminum-containing thin film materials by MOCVD and MOMBE for use in III-V semiconductor materials, such as HEMT devices, is currently under active investigation. The preparation of uniform, conformal aluminum and boron containing thin film materials from the chemical vapor deposition (CVD) of aluminum borane cluster precursor compounds has been studied. A variety of substrates, deposition conditions and aluminaborane precursors have been explored and their effect on film composition, growth rate and thin film morphology has been investigated. The thermal depositions of aluminum and boron-containing thin films from aluminum borohydride, AI(BH4)3, on copper, SiO2 and GaAs are reported. Boron incorporation in the films vary depending on substrate temperature, aluminaborane flow and the presence or absence of a H2 carrier. These films have been characterized by SEM, AES and XES.

Type
Research Article
Copyright
Copyright © Materials Research Society 1991

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