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Dependence of the Raman Spectrum of Silicon Nanowires on the Wire Environment

Published online by Cambridge University Press:  01 February 2011

Harald M. Scheel ,
S. Reich  and
C. Thomsen
Harald M. Scheel
Affiliation:
harald.scheel@physik.tu-berlin.de, Technical University Berln, Ins. of Solid State Pysics, Hardenbergstrasse 36, Berlin, 10623, Germany
S. Reich
Affiliation:
sreich@mit.edu, Massachusetts Institute of Technology, Department of Materials Science and Engineering, Cambridge, MA, 02139-4307, United States
C. Thomsen
Affiliation:
thomsen@physik.tu-berlin.de, Technische Universität Berlin, Inst. für Festkörperphysik, Hardenbergstrasse 36, Berlin, 10623, Germany
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Abstract

The large surface to volume ratio in nanometer sized wire structures cause a strong dependence of the optical Raman mode on the thermal conductivity of a surrounding medium. On the basis of optical measurements on silicon nanowires as a function of excitation laser power we explain the very large red-shifted Raman spectra observed already for moderate laser powers. This thermal effect is enhanced by a silicon oxide sheath, rendering a reduced thermal contact of the wires to the substrate. The intrinsic redshift due to spatial confinement in silicon nanowires is found to be smaller than 2 cm−1.

Keywords

nanostructureRaman spectroscopySi
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 963: Symposium Q – Nanowires and Carbon Nanotubes – Science and Applications , 2006 , 0963-Q16-03
Copyright
Copyright © Materials Research Society 2007

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References

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