Hostname: page-component-84b7d79bbc-g7rbq Total loading time: 0 Render date: 2024-08-01T00:01:36.555Z Has data issue: false hasContentIssue false
  • English
  • Français

Degradation Study of single a-Si:H Alloy Solar Cells

Published online by Cambridge University Press:  21 February 2011

Adam H. Pawlikiewicz ,
A. Banerjee  and
S. Guha
Adam H. Pawlikiewicz
Affiliation:
United Solar Systems Corp., 1100 West Maple Road, Troy, MI 48084
A. Banerjee
Affiliation:
United Solar Systems Corp., 1100 West Maple Road, Troy, MI 48084
S. Guha
Affiliation:
United Solar Systems Corp., 1100 West Maple Road, Troy, MI 48084
Get access

Abstract

The paper presents the experimental data of single a-Si:H cells degraded under high intensity illumination and compares them to the numerically calculated J-V characteristics of degraded a-Si:H solar cells. The cells were deposited at two different substrate temperatures. The current voltage characteristics were calculated using our simulation program which allows for accurate determination of cell response under monochromatic or global AM1.5 spectrum.

We have simulated the light-induced metastable defects (Staebler-Wronski degradation) by increasing the density of localized states. In order to test the validity of this approach we compared the calculated fill factors under AM1.5, blue and red illumination with the measured fill factors for the same light.

From the experimental data we observed mat at near room temperature (∼35°C) both cells reach saturation in degradation of fill factors under high intensity illumination. The saturation level corresponded to the minimum density of localized states (gmin) of 1.2×1017 cm-3eV-1 and is independent of the light intensity used in experiment.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 219: Symposium A – Amorphous Silicon Technology - 1991 , 1991 , 141
Copyright
Copyright © Materials Research Society 1991

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Staebler, D. L. and Wronski, C. R., Appl. Phys. Lett. 31, 292 (1977).CrossRefGoogle Scholar
2. Banerjee, A., Guha, S., Pawlikiewicz, A., Wolf, D. and Yang, J., International Meeting on Stability of Amorphous Materials and Solar Cells, Denver, CO, (1991).Google Scholar
3. Hack, M. and Shur, M., J. Appl. Phys. 54 (10), 5858 (1983).CrossRefGoogle Scholar
4. Pawlikiewicz, A. H. and Guha, S., Proc. 20th IEEE PV Specialists Conf., 251 (1988).Google Scholar
5. Pawlikiewicz, A. H. and Guha, S., IEEE TED, 37 (2), 403, (1990).Google Scholar
6. Stutzmann, M., Jackson, W. and Tsai, C., Phys. Rev. B 32, 23 (1985).Google Scholar
7. Redfield, D. and Bube, R. H., Appl. Phys. Lett. 54, 1037 (1989).Google Scholar
8. Park, H. R., Liu, J. Z. and Wagner, S., Appl. Phys. Lett. 55, 2658 (1989).Google Scholar
9. Park, H. R., Liu, J. Z., Roca, P., Maruyama, A., Isomura, M., Wagner, S. Abelson, J. R. and Finger, F., Mat. Res. Soc. 192, 751 (1990).Google Scholar
10. Hong, C. S. and Hwang, H. L., J. Appl. Phys. 62 (5), 1989 (1987).Google Scholar
11. Jackson, W. B., Stutzmann, M., Appl. Phys. Lett. 49 (15), 957 (1986).Google Scholar
12. Eser, E., J. Appl. Phys. 59 (10), 3508 (1986).Google Scholar
13. Fritzsche, H., AIP Conf., No. 120, 478 (1984).Google Scholar
14. Yang, L., Chen, L. and Catalano, A., International Meeting on Stability of Amorphous Silicon Materials and Solar Cells, Denver, CO, (1991).Google Scholar
15. Glatfelter, T. (private communication).Google Scholar
16. Grimbergen, M., Benatar, L.E., Fahrenbruch, A., Lopez-Otero, A., Redfield, D. and Bube, R.H., presented at the 1991 International Meeting on Stability of Amorphous Silicon Materials and Solar Cells, Denver, CO, (1991).Google Scholar
17. Santos, P.V., Jackson, W. B. and Street, R.A., International Meeting on Stability of Amorphous Silicon Materials and Solar Cells, Denver, CO, (1991).Google Scholar