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Degradation of ZnO nanowire devices under the ambient condition

Published online by Cambridge University Press:  01 February 2011

Dong-Wook Kim
Affiliation:
tweetymint@gmail.com, Korea University, Electrical Engineering, Anam-dong,Seougbuk-gu, Seoul, N/A, Korea, Republic of, 82-2-3290-3801, 82-2-953-3780
Soo-Han Choi
Affiliation:
blur23@naver.com, Korea University, School of Electrical Engineering, Anam-dong,Seougbuk-gu, Seoul, 135-701, Korea, Republic of
Hyun-Jin Ji
Affiliation:
rjaks82@hanmail.net, Korea University, School of Electrical Engineering, Anam-dong,Seougbuk-gu, Seoul, 135-701, Korea, Republic of
Sang Woo Kim
Affiliation:
kimsw@kumoh.ac.kr, Kumoh National Institute of Technology, School of Advanced Materials and System Engineering, Kumi, 730-701, Korea, Republic of
Seung Eon Moon
Affiliation:
semoon@etri.re.kr, Electronics and Telecommunications Research Institute, Daejeon, 305-350, Korea, Republic of
So Jung Park
Affiliation:
tooz19@gmail.com, Electronics and Telecommunications Research Institute, Daejeon, 305-350, Korea, Republic of
Gyu-Tae Kim
Affiliation:
gtkim@korea.ac.kr, Korea University, School of Electrical Engineering, Anam-dong,Seougbuk-gu, Seoul, 135-701, Korea, Republic of
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Abstract

Field effect transistors(FETs) made of ZnO nanowires are very sensitive to the gas environment, so that the passivation can be a good way to get reliable nanowire FETs with longer lifetime and the better mobility. The studies on the passivation effects with the positive electron-beam resist was investigated by selectively covering the part of nanowire devices between the electrodes. Reproducible electrical characteristics were recorded, reflecting the stable electrical properties by the passivation which deters the degradation of a device. Considering the defect states of oxide nanowires dominate the charge states, the pre-state just before the passivation process will be crucial to understand the reproducible and controllable device characteristics of nanowire devices.

Type
Research Article
Copyright
Copyright © Materials Research Society 2008

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References

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