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Defects in Superlattices Under Pressure

Published online by Cambridge University Press:  26 February 2011

Run-Di Hong
Affiliation:
Department of Physics, University of Notre Dame, Notre Dame, Indiana 46556, U.S.A.
David W. Jenkins
Affiliation:
Department of Physics, University of Notre Dame, Notre Dame, Indiana 46556, U.S.A.
S. Y. Ren
Affiliation:
Department of Physics, University of Notre Dame, Notre Dame, Indiana 46556, U.S.A.
John D. Dow
Affiliation:
Department of Physics, University of Notre Dame, Notre Dame, Indiana 46556, U.S.A.
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Abstract

We report theoretical calculations of deep levels in GaAs/AlxGa1−xAs superlattices under hydrostatic pressure. We predict phase diagrams for DX centers: for a given composition x there is a function p(a), which relates pressure p and GaAs quantum-well width a, and defines a phase boundary between two regions: one in which DX is a deep trap in the fundamental band gap and another in which the DX deep level lies in the conduction band.

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Copyright
Copyright © Materials Research Society 1987

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References

[1] Ren, S. Y., Dow, J. D., and Shen, J., “Deep impurity levels in semiconductor superlattices,” to be published.Google Scholar
[2] Hjalmarson, H. P., Vogl, P., Dow, J. D., and Wolford, D. J., Phys. Rev. Lett. 44, 810 (1980).CrossRefGoogle Scholar
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[7] Hjalmarson, H. P., private communication. See also Ref.[2].Google Scholar
[8] Mizuta, M., Tachikawa, M., Kukimoto, H., and Minomura, S., Jpn. J. Appl. Phys. 24, L1431 (1985).CrossRefGoogle Scholar
[9] Hjalmarson, H. P. and Drummond, T. J., Appl. Phys. Lett. 48, 656 (1986).CrossRefGoogle Scholar
[10] See also Li, M. F. and Yu, P., Solid State Commun. 61, 13 (1987) for an opposing viewpoint.CrossRefGoogle Scholar
[11] Vogl, P., Hjalmarson, H. P., and Dow, J. D., J. Phys. Chem. Solids 44, 365 (1983).CrossRefGoogle Scholar
[12] In the virtual crystal approximation, the diagonal matrix elements of AlAs and GaAs are averaged, with weights x and 1−x, and the off-diagonal matrix elements times the square of the bond length are also averaged. See, for example, Ref.[2].Google Scholar
[13] Yamaguchi, E., Jpn. J. Appl. Phys. 25, L643 (1986).CrossRefGoogle Scholar
[14] The critical pressure pc for GaAs is approximately 25 kbar.Google Scholar

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