Hostname: page-component-84b7d79bbc-4hvwz Total loading time: 0 Render date: 2024-07-25T11:03:20.405Z Has data issue: false hasContentIssue false
  • English
  • Français

Defects in Superlattices Under Pressure

Published online by Cambridge University Press:  26 February 2011

Run-Di Hong ,
David W. Jenkins ,
S. Y. Ren  and
John D. Dow
Run-Di Hong
Affiliation:
Department of Physics, University of Notre Dame, Notre Dame, Indiana 46556, U.S.A.
David W. Jenkins
Affiliation:
Department of Physics, University of Notre Dame, Notre Dame, Indiana 46556, U.S.A.
S. Y. Ren
Affiliation:
Department of Physics, University of Notre Dame, Notre Dame, Indiana 46556, U.S.A.
John D. Dow
Affiliation:
Department of Physics, University of Notre Dame, Notre Dame, Indiana 46556, U.S.A.
Get access

Abstract

We report theoretical calculations of deep levels in GaAs/AlxGa1−xAs superlattices under hydrostatic pressure. We predict phase diagrams for DX centers: for a given composition x there is a function p(a), which relates pressure p and GaAs quantum-well width a, and defines a phase boundary between two regions: one in which DX is a deep trap in the fundamental band gap and another in which the DX deep level lies in the conduction band.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 77: Symposium D – Interfaces, Superlattices, and Thin Films , 1986 , 545
Copyright
Copyright © Materials Research Society 1987

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Ren, S. Y., Dow, J. D., and Shen, J., “Deep impurity levels in semiconductor superlattices,” to be published.Google Scholar
[2] Hjalmarson, H. P., Vogl, P., Dow, J. D., and Wolford, D. J., Phys. Rev. Lett. 44, 810 (1980).CrossRefGoogle Scholar
[3] Chadi, D. J. and Cohen, M. L., Phys. Rev. B8, 5747 (1973).CrossRefGoogle Scholar
[4] Ren, S. Y., Dow, J. D., and Wolford, D. J., Phys. Rev. B25, 7661 (1982).CrossRefGoogle Scholar
[5] Wolford, D. J., Kuech, T. F., Bradley, J. A., Gell, M. A., Ninno, D., and Jaros, M., J. Vac. Sci. Technol. B4, 1043 (1986).CrossRefGoogle Scholar
[6] Lang, D. V. and Logan, R. A., Phys. Rev. Lett. 39, 635 (1977).CrossRefGoogle Scholar
[7] Hjalmarson, H. P., private communication. See also Ref.[2].Google Scholar
[8] Mizuta, M., Tachikawa, M., Kukimoto, H., and Minomura, S., Jpn. J. Appl. Phys. 24, L1431 (1985).CrossRefGoogle Scholar
[9] Hjalmarson, H. P. and Drummond, T. J., Appl. Phys. Lett. 48, 656 (1986).CrossRefGoogle Scholar
[10] See also Li, M. F. and Yu, P., Solid State Commun. 61, 13 (1987) for an opposing viewpoint.CrossRefGoogle Scholar
[11] Vogl, P., Hjalmarson, H. P., and Dow, J. D., J. Phys. Chem. Solids 44, 365 (1983).CrossRefGoogle Scholar
[12] In the virtual crystal approximation, the diagonal matrix elements of AlAs and GaAs are averaged, with weights x and 1−x, and the off-diagonal matrix elements times the square of the bond length are also averaged. See, for example, Ref.[2].Google Scholar
[13] Yamaguchi, E., Jpn. J. Appl. Phys. 25, L643 (1986).CrossRefGoogle Scholar
[14] The critical pressure pc for GaAs is approximately 25 kbar.Google Scholar