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Defects in GaAs as Revealed by Chemical Etching

Published online by Cambridge University Press:  28 February 2011

H. Lessoff  and
W. Tseng
H. Lessoff
Affiliation:
Naval Research Laboratory, Washington, DC 20375-5000
W. Tseng
Affiliation:
Naval Research Laboratory, Washington, DC 20375-5000
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Abstract

A new eutectic etchant for GaAs has been developed to display (a) the normal etch pit patterns, but also to reveal (b) rectangular, (c) shallow matrix and (d) raised geometric patterns. Results on various GaAs substrates, ranged from undoped to In-, Cr-, Te-, Si-doped materials, show a general trend: The materials having the numbers of (a), (b) and (c) etched patterns are roughly in the above order (from high density to low density). Whereas, for the density of the raised geometric patterns, the ranking is reversed. It is concluded that the major factor in developing the (a), (b) and (c) etched patterns is due to the stress, while the (d) pattern may be due to dopant and its influence on Ga to As bondings.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 46: Symposium B – Microscopic Identification of Electronic Defects in Semiconductors , 1985 , 397
Copyright
Copyright © Materials Research Society 1985

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References

[1] Grabmaier, J. G. and Watson, C. B., Phys. Status Solidi, 32 K13 (1969).Google Scholar
[2] Lessoff, H. and Gorman, R., J. Electronic Materials, 13 733 (1984).Google Scholar
[3] Tseng, W. F., Lessoff, H. and Gorman, R., J. Electroch-ei. Soc., in press.Google Scholar