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Defects at the Interface of GaAsxP1−x/Gap Grown by Vapor Phase Epitaxy
Published online by Cambridge University Press: 25 February 2011
Abstract
Defects and microstructures in a ternary GaAsxP−x compound have been studied by transmission electron microscopy. The compound was grown on a (100) GaP substrate by vapor phase epitaxial. Crystal growth striation contrast was detected in a TEM image. This contrast was explained by local compositional variation of As and P. The distribution of misfit dislocations in the interface region was also studied.
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- Copyright © Materials Research Society 1989