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Defect States In p-ZnSe:N Grown By MOVPE

Published online by Cambridge University Press:  15 February 2011

Shizuo Fujita
Affiliation:
Department of Electronic Science and Engineering, Kyoto University, Kyoto 606-01, Japan
Ken-Ichi Ogata
Affiliation:
Department of Electronic Science and Engineering, Kyoto University, Kyoto 606-01, Japan
Daisuke Kawaguchi
Affiliation:
Department of Electronic Science and Engineering, Kyoto University, Kyoto 606-01, Japan
Zhi Gang Peng
Affiliation:
Department of Electronic Science and Engineering, Kyoto University, Kyoto 606-01, Japan
Shigeo Fujita
Affiliation:
Department of Electronic Science and Engineering, Kyoto University, Kyoto 606-01, Japan
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Abstract

Concentration and origin of defect states in p-type nitrogen-doped ZnSe (p-ZnSe:N) grown by metalorganic vapor-phase epitaxy (MOVPE) are discussed by means of timeresolved photoluminescence and deep level transient spectroscopy. Thermal annealing, which is a useful tool for realizing p-type conductivity, results in deep defect states which seem to be associated with Zn vacancies and with nitrogen acceptors. By lowering the annealing temperature, the trap concentrations can be successfully reduced without seriously sacrificing the acceptor activation efficiency, although further reduction of Zn vacancies is pointed out as a remaining requirement for the improvement of quality of MOVPE-grown p-type layers.

Type
Research Article
Copyright
Copyright © Materials Research Society 1997

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References

1. Wolk, J.A., Ager, J.W. III, Duxstad, K.J., Hailer, E.E., Taskar, N.R., Dorman, D.R., and Olego, D.J., Appl. Phys. Lett. 63, 2756 (1993).CrossRefGoogle Scholar
2. Kamata, A., Mitsuhashi, H., and Fujita, H., Appl. Phys. Lett. 63, 3353 (1993).CrossRefGoogle Scholar
3. Fujita, Sz., Matsumoto, S., and Fujita, Sg., J. Electron. Mater. 22, 521 (1993).CrossRefGoogle Scholar
4. Fujita, Y., Terada, T., and Suzuki, T., Jpn. J. Appl. Phys. 34, L1034 (1995).CrossRefGoogle Scholar
5. Akram, S. and Bhat, I., J. Cryst. Growth 138, 105 (1994).CrossRefGoogle Scholar
6. Kamata, A., J. Cryst. Growth 145, 557 (1994).CrossRefGoogle Scholar
7. Stanzl, H., Wolf, K., Hahn, B., and Gebhardt, W., J. Cryst. Growth 145, 918 (1994).CrossRefGoogle Scholar
8. Toda, A., Margalith, T., Imanishi, D., Yanashima, K., and Ishibashi, A., Electron. Lett. 31, 1921 (1995).CrossRefGoogle Scholar
9. Taskar., N.R. Khan, B.A., Dorman, D.R., and Shahzad, K., Appl. Phys. Lett. 62, 270 (1993).CrossRefGoogle Scholar
10. Fujita, Sz., Tojyo, T., Yoshizawa, T., and Fujita, Sg., J. Electron. Mater. 24, 137 (1995).CrossRefGoogle Scholar
11. Taudt, W., Wachtendorf, B., Beccard, R., Wahid, A., Heuken, M., Gurskii, A.L., and Vakarelska, K., J. Cryst. Growth 145, 583 (1994).CrossRefGoogle Scholar
12. Ogata, K., Kawaguchi, D., Kera, T., Fujita, Sz., and Fujita, Sg., J. Cryst. Growth 159, 312 (1996).CrossRefGoogle Scholar
13. Ogata, K., Kera, T., Kawaguchi, D., Fujita, Sz., and Fujita, Sg., presented at 8th Int. Conf. Metal Organic Vapour Phase Epitaxy, Cardiff, UK, 1996; J. Cryst. Growth, in press.Google Scholar
14. Fujita, Sz. and Fujita, Sg., Appl. Surf. Sci. 86, 431 (1995).CrossRefGoogle Scholar
15. Kawakami, Y., Ohnakado, T., Tsuka, M., Tokudera, S., Ito, Y., Fujita, Sz., and Fujita, Sg., J. Vac. Sci. & Technol. B11, 2057 (1993).CrossRefGoogle Scholar
16. Suda, J., Tsuka, M., Honda, D., Funato, M., Kawakami, Y., Fujita, Sz., and Fujita, Sg., J. Electron. Mater. 25, 223 (1996).CrossRefGoogle Scholar
17. Hauksson, I.S., Suda, J., Tsuka, M., Kawakami, Y., Fujita, Sz., and Fujita, Sg., J. Cryst. Growth 159, 329 (1996).CrossRefGoogle Scholar
18. Matsumoto, T., Egashira, K., and Kato, T., J. Cryst. Growth 159, 280 (1996).CrossRefGoogle Scholar
19. Ando, K., Kawaguchi, Y., Ohno, T., Ohki, A., and Zembutsu, S., Appl. Phys. Lett. 63, 191 (1993).CrossRefGoogle Scholar
20. Hu, B., Karczewski, G., Luo, H., Samarth, N., and Furdyna, J.K., Appl. Phys. Lett. 63, 358 (1993).CrossRefGoogle Scholar

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