Skip to main content Accessibility help
×
Home
Hostname: page-component-684899dbb8-pcn4s Total loading time: 0.161 Render date: 2022-05-25T01:15:59.335Z Has data issue: true Feature Flags: { "shouldUseShareProductTool": true, "shouldUseHypothesis": true, "isUnsiloEnabled": true, "useRatesEcommerce": false, "useNewApi": true }

Defect Reduction in SiC Growth Using Physical Vapor Transport

Published online by Cambridge University Press:  01 February 2011

Darren Hansen
Affiliation:
darren.hansen@dowcorning.comdarrenhansen77@hotmail.com, Dow Corning Corp, DCCSS, Auburn, Michigan, United States
Mark J Loboda
Affiliation:
darren.hansen@dowcorning.comdarrenhansen77@hotmail.com, Dow Corning Corp, DCCSS, Auburn, Michigan, United States
Roman Victorovich Drachev
Affiliation:
darren.hansen@dowcorning.comdarrenhansen77@hotmail.com, Dow Corning Corp, DCCSS, Auburn, Michigan, United States
Edward Sanchez
Affiliation:
darren.hansen@dowcorning.comdarrenhansen77@hotmail.com, Dow Corning Corp, DCCSS, Auburn, Michigan, United States
Jie Zhang
Affiliation:
darren.hansen@dowcorning.comdarrenhansen77@hotmail.com, Dow Corning Corp, DCCSS, Auburn, Michigan, United States
Eric P Carlson
Affiliation:
darren.hansen@dowcorning.comdarrenhansen77@hotmail.com, Dow Corning Corp, DCCSS, Auburn, Michigan, United States
Jianwei Wan
Affiliation:
darren.hansen@dowcorning.comdarrenhansen77@hotmail.com, Dow Corning Corp, DCCSS, Auburn, Michigan, United States
Gil Chung
Affiliation:
darren.hansen@dowcorning.comdarrenhansen77@hotmail.com, Dow Corning Corp, DCCSS, Auburn, Michigan, United States
Get access

Abstract

4H SiC is a promising material because of its mechanical, electrical, and physical properties. However, SiC material defects have had a rate limiting effect on the widespread adoption of SiC. Micropipes, basal plane dislocations (BPD), elementary screw dislocations (SDD) and threading edge dislocations (TED) have all been identified as limiting to device operation and/or performance. An ideal PVT strategy for manufacturing SiC crystals would be capable of driving defects out the crystal via a combination of thermal field control and defect dissociation pathways. In this work a PVT technology was realized which is capable of continuously improving the crystal quality. A low defect PVT process was conceived and optimized using iterative experiment and simulation methods. During the maturation of the process it was observed that the crystal defect density repeatedly decreased relative to the seed crystal, as evaluated by x-ray topography, x-ray diffraction, and molten salt etching. The process improvements were leveraged successfully to achieve 4H n+ SiC wafers at 76-100 mm diameter with MPD <1 cm-2, SDD <500 cm-2, and BPD <500 cm-2. This paper will illustrate the defect reduction pathways leading to state of the art defect density 4H SiC crystals and the impact of the improved crystal on epitaxy defects and simple device experiments.

Type
Research Article
Copyright
Copyright © Materials Research Society 2010

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Powell, A., Jenny, J., Mueller, S., Hobgood, H. M., Tsvetkov, V., Lenord, R., and Carter, C., Int. J. of High Speed Electrnonics and Systems 751–777 (2006) 1.Google Scholar
2 Schulze, N., Barrett, D.L., and Pensl, G., Appl. Phys. Lett. 72 (1998) 1632 CrossRefGoogle Scholar
3 Semmelroth, K., Schulze, N., and Pensl, G., J. Phys.: Condens. Matter 16, S1597 (2004).Google Scholar
4 Bakin, A.S., Dorozhkin, S.I, Lebedev, A.O., Kirillov, B.A., Ivanov, A.A., and Tairov, Y.M, J. Cryst Growth 198/199 (1999) 1015.CrossRefGoogle Scholar
5 Schmitt, E., Straubinger, T., Rasp, M, and Weber, A.D., Superlattices and Microstructures 40 (2006) 320.CrossRefGoogle Scholar
6 Ha, S., Nuhfer, N. T., Rohrer, G.S., Graef, M. De, and Skowronski, M., J. Cryst. Growth 220 (2000) 308.CrossRefGoogle Scholar
7 Tupitsyn, E.Y., Arulchakkaravarthi, A., Drachev, R.V., and Sudarshan, T.S., J. Gryst. Growth 299 (2007) 70.CrossRefGoogle Scholar
8 Selder, M., Kadinski, L., Durst, F., Straubinder, T.L., Wellmann, P.L. and Hofmann, D., Mater. Sci. Forum Vols. 353–356 (2001) 65.CrossRefGoogle Scholar
9 Wan, J., Park, S.H., Chung, G., Carlson, E., and Loboda, M.J. in Silcon Carbide and Related Materials 2005, Devaty, R.P., Larkin, D.J., and Saddow, S.E. eds, (2006) 175.Google Scholar
10 MacMillan, M.F., Loboda, M.J., Chung, G., Carlson, E., and Wan, J. in Silcon Carbide and Related Materials 2005, Devaty, R.P., Larkin, D.J., and Saddow, S.E. eds, (2006) 175.CrossRefGoogle Scholar
11 Dudley, M. and Huang, X., Mater. Sci. Forum 338–342 (2000) 431.CrossRefGoogle Scholar

Save article to Kindle

To save this article to your Kindle, first ensure coreplatform@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about saving to your Kindle.

Note you can select to save to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be saved to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

Defect Reduction in SiC Growth Using Physical Vapor Transport
Available formats
×

Save article to Dropbox

To save this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you used this feature, you will be asked to authorise Cambridge Core to connect with your Dropbox account. Find out more about saving content to Dropbox.

Defect Reduction in SiC Growth Using Physical Vapor Transport
Available formats
×

Save article to Google Drive

To save this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you used this feature, you will be asked to authorise Cambridge Core to connect with your Google Drive account. Find out more about saving content to Google Drive.

Defect Reduction in SiC Growth Using Physical Vapor Transport
Available formats
×
×

Reply to: Submit a response

Please enter your response.

Your details

Please enter a valid email address.

Conflicting interests

Do you have any conflicting interests? *