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Deep-UV Transparent Conductive β-Ga2O3 Film

Published online by Cambridge University Press:  21 March 2011

Masahiro Orita
Affiliation:
Hosono Transparent ElectroActive Materials, ERATO, JST, KSP C-1232, 3-2-1 Sakado, Takatsu-ku, Kawasaki, 213-0012, JAPAN
Hiromichi Ohta
Affiliation:
Hosono Transparent ElectroActive Materials, ERATO, JST, KSP C-1232, 3-2-1 Sakado, Takatsu-ku, Kawasaki, 213-0012, JAPAN
Masahiro Hirano
Affiliation:
Hosono Transparent ElectroActive Materials, ERATO, JST, KSP C-1232, 3-2-1 Sakado, Takatsu-ku, Kawasaki, 213-0012, JAPAN
Hideo Hosono
Affiliation:
Materials and Structures Laboratory, Tokyo Institute of Technology, Nagatsuta, Midori-ku, Yokohama 226-8503, JAPAN
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Abstract

Deep ultraviolet transparent and electrical conductive β-Ga2O3 film was prepared on SiO2 glass substrate. The film had electric conductivity of 1 Scm−1, carrier density of 1.4 × 1019cm−3 and mobility of 0.44 cm2V−1s−1. Internal transmittance at wavelength of 248 nm exceeded 50 %. Conductivity was enhanced at an oxygen pressure less than 10−4 Pa, and transparency appeared at a substrate temperature over 800 °C.

Type
Research Article
Copyright
Copyright © Materials Research Society 2001

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