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Deep-Level Characterization of Free-Standing HVPE-grown GaN Substrates Using Transparent Conductive Polyaniline Schottky Contacts

Published online by Cambridge University Press:  08 April 2011

Yoshitaka Nakano
Affiliation:
Chubu University, Kasugai, Aichi 487-8501, Japan
Nobuyuki Matsuki
Affiliation:
National Institute of Materials Science, Tsukuba, Ibaraki 305-0044, Japan
Mickael Lozac’h
Affiliation:
University of Tsukuba, Tsukuba, Ibaraki 305-8577, Japan
Kazuaki Sakoda
Affiliation:
National Institute of Materials Science, Tsukuba, Ibaraki 305-0044, Japan
Masatomo Sumiya
Affiliation:
National Institute of Materials Science, Tsukuba, Ibaraki 305-0044, Japan
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Abstract

We have investigated electronic deep levels in free-standing n-GaN substrates grown by hydride vapor phase epitaxy (HVPE), by means of a steady-state photo-capacitance spectroscopy technique, using transparent conductive polyaniline Schottky contacts. Two specific deep levels located at ~1.7 and ~3.1 eV below the conduction band were revealed to be significantly reduced compared to those in n-GaN layers grown by metal-organic chemical vapor deposition. This difference between them is probably due to extremely low concentrations of threading dislocations and residual C impurities in the HVPE-grown n-GaN substrates.

Type
Research Article
Copyright
Copyright © Materials Research Society 2011

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Deep-Level Characterization of Free-Standing HVPE-grown GaN Substrates Using Transparent Conductive Polyaniline Schottky Contacts
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Deep-Level Characterization of Free-Standing HVPE-grown GaN Substrates Using Transparent Conductive Polyaniline Schottky Contacts
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