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DC and AC Gate-Bias Stability of Nanocrystalline Silicon Thin-Film Transistors Made on Colorless Polyimide Foil Substrates

Published online by Cambridge University Press:  28 June 2011

I-Chung Chiu
Affiliation:
Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei, 10617 Taiwan
I-Chun Cheng
Affiliation:
Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei, 10617 Taiwan Department of Electrical Engineering, National Taiwan University, Taipei, 10617 Taiwan
Jian Z. Chen
Affiliation:
Institute of Applied Mechanics, National Taiwan University, Taipei, 10617 Taiwan
Jung-Jie Huang
Affiliation:
Department of Materials Science and Engineering, MingDao University, Changhua, 52345 Taiwan
Yung-Pei Chen
Affiliation:
Display Technology Center, Industrial Technology Research Institute, Hsinchu, 31040 Taiwan
Corresponding
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Abstract

Staggered bottom-gate hydrogenated nanocrystalline silicon (nc-Si:H) thin-film transistors (TFTs) were demonstrated on flexible colorless polyimide substrates. The dc and ac bias-stress stability of these TFTs were investigated with and without mechanical tensile stress applied in parallel to the current flow direction. The findings indicate that the threshold voltage shift caused by an ac gate-bias stress was smaller compared to that caused by a dc gate-bias stress. Frequency dependence of threshold voltage shift was pronounced in the negative gate-bias stress experiments. Compared to TFTs under pure electrical gate-bias stressing, the stability of the nc-Si:H TFTs degrades further when the mechanical tensile strain is applied together with an electrical gate-bias stress.

Type
Research Article
Copyright
Copyright © Materials Research Society 2011

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DC and AC Gate-Bias Stability of Nanocrystalline Silicon Thin-Film Transistors Made on Colorless Polyimide Foil Substrates
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