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Damage-Free Ion Beam Doping of Carbon During Molecular Beam Epitaxy of GaAs

Published online by Cambridge University Press:  22 February 2011

Yunosuke Makita
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, Ibaraki 305, JAPAN On leave from Meiji University, 1-1-1 Higashi-mita, Tama, Kawasaki 214, Japan.
Tsutomu Iida
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, Ibaraki 305, JAPAN On leave from Meiji University, 1-1-1 Higashi-mita, Tama, Kawasaki 214, Japan.
Shinji Kimura
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, Ibaraki 305, JAPAN Present address: Universität Konstanz, Fakultät Physik, W-7750 Konstanz, Germany.
Stefan Winter
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, Ibaraki 305, JAPAN Present address: Universität Konstanz, Fakultät Physik, W-7750 Konstanz, Germany.
Akimasa Yamada
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, Ibaraki 305, JAPAN On leave from Meiji University, 1-1-1 Higashi-mita, Tama, Kawasaki 214, Japan.
Hajime Shibata
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, Ibaraki 305, JAPAN On leave from Meiji University, 1-1-1 Higashi-mita, Tama, Kawasaki 214, Japan.
Akira Obara
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, Ibaraki 305, JAPAN On leave from Meiji University, 1-1-1 Higashi-mita, Tama, Kawasaki 214, Japan.
Shigeru Niki
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, Ibaraki 305, JAPAN On leave from Meiji University, 1-1-1 Higashi-mita, Tama, Kawasaki 214, Japan.
Yushin Tsai
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, Ibaraki 305, JAPAN On leave from Meiji University, 1-1-1 Higashi-mita, Tama, Kawasaki 214, Japan.
Shin-ichiro Uekusa
Affiliation:
Meiji University, 1-1-1 Higashi-mita, Tama, Kawasaki 214, Japan.
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Abstract

Recently, we introduced various acceptor impurities into MBE-grown ultra-pure GaAs by conventional high-energy ion implantation and found many novel shallow emissions associated with acceptor-acceptor pairs. Most of these emissions were easily quenched by extremely small amount of residual donor atoms which were unintentionally introduced during doping processes. For the interpretation of impurity effects, the usage of mass-separated atom as dopant source was strongly suggested. Along this consideration, we developed combined ion beam and molecular beam epitaxy (CIBMBE) technology, in which damage-free doping with high mass purity (M/ΔM=100) is expected to be possible. We here present the results of low-energy (100 eV) carbon ion doping using CIBMBE method. Samples were prepared asa function of growth temperature (Tg=400-700°C) and ion beam current. Net hole concentration, |NA-ND| as high as ~1×1020 cm-3 was obtained in as-grown samples. In 2K photoluminescence spectra, emissions due to acceptor-acceptor pairs exhibit specific energy shift with growing |NA-ND|. Results indicate that carbon doping can be made efficiently even at Tg as low as 500°C without any post heat treatment. These results also tell that by CIBMBE method no serious radiation damages are produced and the undesired impurity contamination can be considerably suppressed.

Type
Research Article
Copyright
Copyright © Materials Research Society 1994

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References

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Damage-Free Ion Beam Doping of Carbon During Molecular Beam Epitaxy of GaAs
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