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Damage Mechanisms of Ion Implanted Bulk (0001) ZnO Single Crystals.

Published online by Cambridge University Press:  01 February 2011

B.T. Adekore
Affiliation:
Department of Materials Science and Engineering.North Carolina State University, NC 27695–7907, U.S.A.
I. Usov
Affiliation:
Department of Physics and Astronomy, University of North Carolina, Chapel Hill, NC 27599, U.S.A.
B. Patnaik
Affiliation:
Department of Physics and Astronomy, University of North Carolina, Chapel Hill, NC 27599, U.S.A.
N. Parikh
Affiliation:
Department of Physics and Astronomy, University of North Carolina, Chapel Hill, NC 27599, U.S.A.
R.F Davis
Affiliation:
Department of Materials Science and Engineering.North Carolina State University, NC 27695–7907, U.S.A.
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Abstract

Crystalline damage created by ion-implantation of dopant impurities in ZnO (0001) substrates was characterized as a function of atomic mass of implanted species using triple-axis (2θ-ω/ω) x-ray diffraction and Rutherford backscattering (RBS). The former revealed the presence of implantation-induced strain through the broadening of the isometric and asymmetric 2θ-ω reflections. However, RBS indicated that the damage introduced during implantation of these ions was insufficient to transform the crystalline lattice into a completely amorphous state. Additional XRD characterization as a function of annealing temperature of the implanted materials showed a reduction in the broadening of the isometric reflections, indicating that structural recovery of implanted ZnO crystals can be achieved.

Type
Research Article
Copyright
Copyright © Materials Research Society 2004

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References

REFERENCES:

1. Ohta, Y., Haga, T., Abe, Y., “Crystallographic Features of ZnO single crystals”, Jpn J. Appl. Phys. 36, Part 2, No 8H, L1040–L1042, (1997).Google Scholar
2. Adekore, B.T., Usov, I., Patnaik, B.J., Parikh, N. and Davis, R.F., “Analysis of Structural Damage and Recovery in Ion-Implanted ZnO” To be published.Google Scholar