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C-V and Capacitance Transient Analysis of Self-Implanted Amorphous Si Layers Regrown by Swept-Line Electron Beam (Sled) Annealing†

Published online by Cambridge University Press:  15 February 2011

K. J. Soda ,
R. Y. Dejule  and
B. G. Streetman
K. J. Soda
Affiliation:
Coordinated Science Laboratory and Department of Electrical Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
R. Y. Dejule
Affiliation:
Coordinated Science Laboratory and Department of Electrical Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
B. G. Streetman
Affiliation:
Coordinated Science Laboratory and Department of Electrical Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
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Abstract

It is demonstrated that swept-line electron beam (SLEB) annealing can be successfully employed to recrystallize relatively deep (∼0.5 μm) Si-implanted amorphous silicon layers. DLTS and C-V analysis of these layers show significant reductions in concentration of residual defects and magnitude of dopant redistribution effects. For comparison, similar data for furnace annealed material is also presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1: Symposium – Laser and Electron-Beam Solid Interactions in Materials Processing , 1980 , 353
Copyright
Copyright © Materials Research Society 1981

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Footnotes

*

Current Address: Rome Air Development Center, Hanscom AFB, MA 01731.

†

This work was supported by the Joint Services Electronics Program (U.S. Army, U.S. Navy, U.S. Air Force) under Contract No. N00014-79-C-0424, and by the Army Research Office under contract DAAG-29-80-C-0011.

References

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