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Current Transport in Cu(In,Ga)S2 Based Solar Cells with High Open Circuit Voltage - Bulk vs. Interface

Published online by Cambridge University Press:  31 January 2011

Saoussen Merdes ,
Benjamin Johnson ,
Rodrigo Sáez-Araoz ,
Ahmed Ennaoui ,
Joachim Klaer ,
Iver Lauermann ,
R. Mainz ,
Alexander Meeder  and
Reiner Klenk
Saoussen Merdes
Affiliation:
saoussen.merdes@helmholtz-berlin.de, Helmholtz-Zentum-Berlin, Heterogeneous Material Systems, Glienicker Str. 100, berlin, 14109, Germany, +49-30-8062-2610, +49-30-8062-3199
Benjamin Johnson
Affiliation:
benjamin.johnson@helmholtz-berlin.de, Helmholtz-Zentrum-Berlin, Berlin, Germany
Rodrigo Sáez-Araoz
Affiliation:
rodrigo.saez@helmholtz-berlin.de, Helmholtz-Zentrum-Berlin, Berlin, Germany
Ahmed Ennaoui
Affiliation:
ennaoui@helmholtz-berlin.de, Helmholtz-Zentrum-Berlin, Berlin, Germany
Joachim Klaer
Affiliation:
klaer@helmholtz-berlin.de, Helmholtz-Zentrum-Berlin, Berlin, Germany
Iver Lauermann
Affiliation:
iver.lauermann@helmholtz-berlin.de, Helmholtz-Zentrum-Berlin, Berlin, Germany
R. Mainz
Affiliation:
roland.mainz@helmholtz-berlin.de, Helmholtz-Zentrum-Berlin, Berlin, Germany
Alexander Meeder
Affiliation:
meeder@sulfurcell.de, Sulfurcell Solartechnik GmbH, Berlin, Germany
Reiner Klenk
Affiliation:
klenk@helmholtz-berlin.de, Helmholtz-Zentrum-Berlin, Berlin, Germany
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Abstract

Cu(In,Ga)S2 thin films prepared by rapid thermal sulfurization of metallic precursors yielded solar cells with efficiencies reaching 12.9% [1]. A good short circuit current density was observed together with open circuit voltages up to 850 mV. However, the fill factor was close to, but typically did not exceed 70%. In this contribution we report on the role of junction formation by chemical bath deposition on these parameters. Concentrations in the bath and deposition times were varied. A comparison is made between CdS and Zn(S,O) buffer layers. The influence of the incorporated gallium on surface properties was investigated by ultraviolet photoelectron spectroscopy (UPS) for the valence band edge and near edge X-ray absorption fine structure (NEXAFS) for the conduction band edge. Even in our best cell (13.1%) the activation energy of the saturation current is found to be still smaller than the band gap. High diode ideality factors and voltage dependent current collection prevent higher fill factors.

Keywords

thin filmphotovoltaicelectrical properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1165: Symposium M – Thin-Film Compound Semiconductor Photovoltaics–2009 , 2009 , 1165-M05-15
Copyright
Copyright © Materials Research Society 2009

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References

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