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Cu Deposition Characteristics into Submicron Contact Holes Employing Self-Sputtering With a High Ionization Rate

Published online by Cambridge University Press:  15 February 2011

S. Shingubara
Affiliation:
Department of Electrical Engineering, Hiroshima University, Kagamiyama 1-4-1, Higashihiroshima 739, Japan
A. Sano
Affiliation:
Department of Electrical Engineering, Hiroshima University, Kagamiyama 1-4-1, Higashihiroshima 739, Japan
H. Sakaue
Affiliation:
Department of Electrical Engineering, Hiroshima University, Kagamiyama 1-4-1, Higashihiroshima 739, Japan
T. Takahagi
Affiliation:
Department of Electrical Engineering, Hiroshima University, Kagamiyama 1-4-1, Higashihiroshima 739, Japan
Y. Horiike
Affiliation:
Department of Electrical Engineering, Toyo University, Kujirai-Nakano, Kawagoe, Saitama, Japan
Z. J. Radzimski
Affiliation:
Department of Material Science and Engineering, North Carolina State University, Raleigh, NC 27695-7916, U.S.A.
W. M. Posadowski
Affiliation:
Institute of Electron Technology, Technical University of Wroclaw, 50-372 Wroclaw, Poland
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Abstract

Cu deposition profiles in submicron contact holes are investigated employing the Cu self-sputtering which do not need any inert gas e.g. Ar during sputtering. Excellent bottom coverage in the high aspect ratio contact holes was obtained at a large target-substrate distance in the selfsputtering due to a long mean free path of Cu ions and atoms, although a coverage is poor in Ar sputtering at 6 mTorr. It is also shown that the self-sputtering has low resputtering effect and high self-diffusivity of Cu, while the resputtering predominates in the case of Ar sputtering when DC bias is applied on the substrate. As a consequence, the bottom coverages of the self-sputtered films are much improved than the Ar sputtered ones. The present work strongly suggests that the self-sputtering is promising to fill Cu in sub micron via and contact holes.

Type
Research Article
Copyright
Copyright © Materials Research Society 1996

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References

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