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Crystallization Behavior and Ferroelectric Properties of YMnO3 Thin Films on Si (100) Substrates

Published online by Cambridge University Press:  17 March 2011

Dong Chul Yoo
Affiliation:
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Daejeon 305-701, Korea
Jeong Yong Lee
Affiliation:
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Daejeon 305-701, Korea
Ik Soo Kim
Affiliation:
Semiconductor Materials Laboratory, Korea Institute of Science and Technology, Seoul 136-791, Korea
Yong Tae Kim
Affiliation:
Semiconductor Materials Laboratory, Korea Institute of Science and Technology, Seoul 136-791, Korea
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Abstract

YMnO3 thin films were sputtered on Si (100) substrates under different ambient conditions. After rapid thermal annealing process at 850 °C, the YMnO3 film deposited in Ar ambient had random orientations and the YMnO3 film deposited in Ar+O2 ambient was crystallized with distinct two layers, i.e., c-axis oriented layer in top region and random oriented layer in bottom region. Relations between the microstructure and the electrical properties of Pt/YMnO3/Si capacitor were investigated. Memory window and leakage current depended on the orientation of the YMnO3 thin films and the interfacial microstructure of the YMnO3/Si, respectively

Type
Research Article
Copyright
Copyright © Materials Research Society 2002

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