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Crystalline Perfection of Semiconductor Surfaces by X-Ray Multiple Diffraction

Published online by Cambridge University Press:  21 February 2011

S. L. Morelhao ,
L. H. Avanci  and
L. P. Cardoso
S. L. Morelhao
Affiliation:
Instituto de Fisica, UNICAMP, CP 6165, 13081–970 Campinas, SP, Brazil
L. H. Avanci
Affiliation:
Instituto de Fisica, UNICAMP, CP 6165, 13081–970 Campinas, SP, Brazil
L. P. Cardoso
Affiliation:
Instituto de Fisica, UNICAMP, CP 6165, 13081–970 Campinas, SP, Brazil
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Abstract

In this study, a method is proposed for evaluating the crystalline perfection of semiconductor surfaces. This method takes advantage of the three-dimensional nature of the X-ray multiple diffraction (MD) phenomenon. The effects that crystalline imperfections have on the MD Bragg condition are theoretically investigated. This theory provides information regarding the dynamical (primary extinction) or the kinematical (secondary extinction) regime in which the energy transfer among the MD beams occurs. In dynamical regime when the surface consists of large perfect-crystal regions (low surface-defect density), the method permits analysis of misorientation of these regions in directions parallel and perpendicular to the crystal surface. The perfection of GaAs and Ge (001) surfaces has been investigated using this method after mechanical and/or chemical polishing.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 355: Symposium B1 – Evolution of Thin-Film and Surface Structure and Morphology , 1994 , 215
Copyright
Copyright © Materials Research Society 1995

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References

REFERENCES

[1] Hang, Z., Shen, H., and Poliak, F.H., J. Appl. Phys. 64, 3233 (1988).Google Scholar
[2] Wang, V.S. and Matyi, R.J., J. Elect. Mat. 21(1), 23 (1992).Google Scholar
[3] Wang, V. S. and Matyi, R. J., J. Appl. Phys. 72(11), 5158 (1992).Google Scholar
[4] Isherwood, B.J. and Wallace, C.A., J. Appl. Cryst. 3, 66 (1970)Google Scholar
[5] Darwin, C. G., Phil. Mag. 43, 800 (1922).Google Scholar
[6] Zachariasen, W. H., Phys. Rev. Lett. 18(6), 195 (1967).Google Scholar
[7] Kato, N., Acta Cryst. A36, 770 (1980).Google Scholar
[8] Moran, P. D. and Matyi, R. J., Acta Cryst. A49, 330 (1993).Google Scholar
[9] Zachariasen, W. H., Acta Cryst. 18, 705 (1965).Google Scholar
[10] Iida, A. and Kohra, K., Phys. Status Solidi A51, 533 (1979).Google Scholar
[11] Morelhao, S. L., Cardoso, L. P., Sasaki, J.M. and de Carvalho, M.M.G., J. Appl. Phys. 70(5), 2589 (1991).Google Scholar
[12] Chang, S. L., in Multiple Diffraction ofX-Ray in Crystals, Springer Ser. Solid-State Sci., Vol. 50 (1984).Google Scholar
[13] Caticha-Ellis, S., Acta Cryst. A25, 666 (1969).Google Scholar
[14] Moon, R. M. and Shull, C. G., Acta Cryst. 17, 805 (1964).Google Scholar
[15] Colella, R., Acta Cryst. A30, 413 (1974).Google Scholar
[16] Pinker, Z. G. in Dynamical Scattering ofX-Ray in Crystals, Springer Ser. Solid-State Sci., Vol. 3 (1977).Google Scholar
[17] Morelhao, S. L. and Cardoso, L. P., J. Appl. Phys. 73(9), 4218 (1993).Google Scholar
[18] Morelhao, S. L. and Cardoso, L. P., Solid State Comm. 88(6), 465 (1993).Google Scholar
[19] Schneider, J. R., Goncalves, O.D. and Graf, H.A., Acta Cryst. A44, 461 (1988).Google Scholar